Synthesis and luminescent properties of red-emitting phosphors: ZnSiF6·6H2O and ZnGeF6·6H2O doped with Mn4+

Photoluminescence and resonant energy transfer from Tb3+ to Eu3+ in Tb3Ga5O12:Eu3+ garnet phosphor

“…The same temperature dependence as in Fig. 13 Kubus et al [57] also observed an increase in the PL intensity from 100 K to 250 K in ZnSiF 6 Á 6H 2 O:Mn 4 þ red phosphor. Of course, the decrease in I PL with increasing T above ∼340 K in Fig.…”

Photo-induced degradation and thermal decomposition in ZnSnF6·6H2O:Mn4+ red-emitting phosphor

“…It is noted that in Fig. 5 the I PL value in the T = 20-220 K range slightly increases with increasing Kubus et al [33] also observed an increase in the emission intensity from 100 K to 250 K in ZnSiF 6 Á6H 2 O:Mn 4+ and ZnGeF 6 Á6H 2 O:Mn 4+ . Note that such unusual phenomenon can never be explained by the conventional thermal quenching of the first term in Eq.…”

Synthesis of K2XF6:Mn4+ (X=Ti, Si and Ge) red phosphors for white LED applications with low-concentration of HF

“…The former excitation band ($350 nm) can be attributed to the spin-allowed between 4 A 2g and 4 T 1g transition of Mn 4+ . The latter one ($465 nm) is ascribed to the same transition of 4 A 2g to 4 T 2g [23]. The half peak width of the excitation band at $460 nm is about 50 nm, which is even broader than that of GaN-chip emission ($20 nm).…”