2016
DOI: 10.1142/s2010135x16500065
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Synthesis and microwave dielectric behavior of (Bi1−xPbx)NbO4ceramics

Abstract: Ceramic samples of (Bi 1ÀxPb

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Cited by 8 publications
(3 citation statements)
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“…Bismuth orthoniobate (BiNbO 4 ) is still of interest after more than half a century due to its microwave dielectric and photocatalytic properties. , BiNbO 4 ceramics containing V 2 O 5 and CuO have excellent dielectric properties, as was shown for the first time in the work revealing high values of the quality factor Q r = 4260 (at 4.3 GHz), dielectric constant ε r = 43, and the coefficient of resonant frequency t f = +38 ppm/°C. In order to obtain high-density ceramics and optimize the dielectric properties of bismuth orthoniobate, sintering additives are added and bismuth or niobium atoms are substituted hetero- and isovalently. The low temperature of the synthesis (∼1000 °C) of bismuth orthoniobate materials promotes their use as dielectrics for multilayer microwave circuits with silver (copper) inner conductors. Thus, bismuth orthoniobate materials facilitate miniaturization of the resonant devices…”
Section: Introductionmentioning
confidence: 99%
“…Bismuth orthoniobate (BiNbO 4 ) is still of interest after more than half a century due to its microwave dielectric and photocatalytic properties. , BiNbO 4 ceramics containing V 2 O 5 and CuO have excellent dielectric properties, as was shown for the first time in the work revealing high values of the quality factor Q r = 4260 (at 4.3 GHz), dielectric constant ε r = 43, and the coefficient of resonant frequency t f = +38 ppm/°C. In order to obtain high-density ceramics and optimize the dielectric properties of bismuth orthoniobate, sintering additives are added and bismuth or niobium atoms are substituted hetero- and isovalently. The low temperature of the synthesis (∼1000 °C) of bismuth orthoniobate materials promotes their use as dielectrics for multilayer microwave circuits with silver (copper) inner conductors. Thus, bismuth orthoniobate materials facilitate miniaturization of the resonant devices…”
Section: Introductionmentioning
confidence: 99%
“…In 2016, Butee et al [20] studied (Bi 1-x Pb x )NbO 4 samples, prepared by the solid-state reaction method, with the addition of V 2 O 5 . The dielectric post (DP) resonator technique was employed for the microwave characterisation of the samples that was performed at room temperature and at ~4-5 GHz.…”
Section: State Of the Artmentioning
confidence: 99%
“…Besides the addition of different oxides, such as CuO [6], ZnO [13], V 2 O 5 [14,15], PbO, Bi 2 O 3 [16], and Fe 2 O 3 [17], several researchers tried to improve bismuth niobate properties through the substitution of bismuth for metals or lanthanides. In order to accomplish this task, (Bi 1−x R x )NbO 4 compositions were developed and studied, where R represents different metals, such as Fe [18] or Pb [19], and different lanthanides, such as Ce, Nd, Dy, Er, La, Sm, Ta, Gd, and La [20][21][22][23][24][25].…”
mentioning
confidence: 99%