2007
DOI: 10.1021/ja0717459
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Synthesis and Nonvolatile Memory Behavior of Redox-Active Conjugated Polymer-Containing Ferrocene

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Cited by 163 publications
(120 citation statements)
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“…4,5 This diversity in structure and dynamics has facilitated a myriad of applications that include self-healing, 6,7 light emission, 8,9 photovoltaics, 10,11 stimuli-responsive behaviour, 12,13 catalysis, 14 information storage, 15 antibacterial activity, 16 and nanopatterning. [17][18][19] Main-chain polymetallocenes based on ferrocene, such as polyferrocenylsilanes (PFSs) ( Fig.…”
Section: Introductionmentioning
confidence: 99%
“…4,5 This diversity in structure and dynamics has facilitated a myriad of applications that include self-healing, 6,7 light emission, 8,9 photovoltaics, 10,11 stimuli-responsive behaviour, 12,13 catalysis, 14 information storage, 15 antibacterial activity, 16 and nanopatterning. [17][18][19] Main-chain polymetallocenes based on ferrocene, such as polyferrocenylsilanes (PFSs) ( Fig.…”
Section: Introductionmentioning
confidence: 99%
“…68 The memory cell can store in formation electrochemically recorded in the form of (i) a possible redox state of the complex or (ii) a number of the redox states taken in a preset ratio (this is specified by the voltage applied) over a period of 600 h. Ferrocene containing polymer 14 acquires conducting properties upon electrochemical oxidation to corresponding ferri cinium cation and can retain them for 7 h at room tem perature. 69 Recently, considerable advances in fabrication of non volatile redox based molecular memory systems have been made by researchers from a multidisciplinary group at the Califormia NanoSystems Institute. They reported a molecular memory array with a data density of 100 Gbit cm -2 .…”
Section: Scheme 16mentioning
confidence: 99%
“…In past few decades, many research studies have been conducted on organic-based electronic devices [1,2]. Organic bistable memory devices (OBDs) have attracted tremendous attention as they could be used as flexible nonvolatile memory devices in the near future.…”
Section: Introductionmentioning
confidence: 99%