Nanocrystalline ZrO 2 materials were prepared by sol-gel method combining different W = [H 2 O]/[ZTB] ratios (ZTB: zirconium tetrabutoxide) with 600, 800, and 1000°C annealing temperatures, yielding diverse phase compositions. A lower post-synthesis annealing temperature (600°C) favored the t-ZrO 2 tetragonal phase while higher temperatures (800 and 1000°C) yielded the monoclinic one (m-ZrO 2 ). Depending on the preparation conditions, mixed structure materials are readily obtained. The luminescence activator in the undoped ZrO 2 is assumed as trivalent titanium and emission bands are assigned to the 3d 1 (e g ) ? 3d 1 (t 2g ) transition. Due to weaker crystal field in m-ZrO 2 form, the Ti 3? emission band is red-shifted from 410 nm in t-ZrO 2 to 500 nm. The luminescence intensity of the t-ZrO 2 form is quenched at higher temperature than that of m-ZrO 2 , indicating higher activation energy and smaller Stokes shift. The undoped ZrO 2 excitation seems to involve photoionization of Ti 3? to Ti IV . Simultaneously, the freed electron is trapped to the oxygen vacancies (F ?? centers) created by Ti 3? /Ti IV charge compensation, so this can be considered as a metalto-host/ligand charge transfer. Since most of the excitation results in immediate emission, the traps are probably very shallow though deeper ones leads to the persistent luminescence from the undoped ZrO 2 .