Synthesis and optoelectronic characterization of coronene/CdO self-powered photodiode

ÜNAL, Fatih; Kurt, Mustafa; Aktas, Sitki; Kabaer, Mehmet

doi:10.1007/s10854-022-09237-y

Cited by 9 publications

(5 citation statements)

References 58 publications

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“…This difference can be explained by the stoichiometry, their thickness, differences in the crystal lattice systems, and differences in the particle size of the produced films. 3gives the relationship between absorbance (A) and transmittance (T) and when the multiple reflections are neglected, transmittance of the film is calculated with following equation [32]; 𝑇 = (1 − 𝑅) ! exp(−𝐴) (4) where, R refers to the reflectance and it can be defined with the relationship between transmittance and absorbance as given by [33]; 𝑅 = 1 − ( , -./ (2&)…”

Section: Resultsmentioning

confidence: 99%

“…versus ℎ𝜐 graphs of the CdSe and CdS thin films. 𝐴 = −𝑙𝑜𝑔𝑇 (3) Equation3gives the relationship between absorbance (A) and transmittance (T) and when the multiple reflections are neglected, transmittance of the film is calculated with following equation[32]; 𝑇 = (1 − 𝑅) ! exp(−𝐴) (4) where, R refers to the reflectance and it can be defined with the relationship between transmittance and absorbance as given by[33]; 𝑅 = 1 − (…”

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confidence: 99%

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Determination of the basic optical parameters of CdX (X=Se, S) thin films prepared with low concentration precursor solutions

ÜNAL¹

2023

JCHAR

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CdSe and CdS thin films, one of the II-VI group semiconductor compounds, were successfully grown by electrochemical deposition method using low concentrations of precursor solutions. Optical properties of the fabricated thin films were investigated in the 300 -850 nm wavelength range. The absorption coefficients of CdSe and CdS thin films were found to be as 5.8 x 10 5 m -1 and 8.9 x 10 6 m -1 , respectively, and direct energy band gaps these thin films were determined 2.72 eV and 2.75 eV. While the average transmission value of the CdSe was 85%, that of the CdS was 8%. Additionally, extinction coefficient values of the CdSe and CdS thin films were defined as 0.033 and 0.51, respectively and refractive index values of these were determined as 1.14 and 1.35. Besides, optical dielectric constants of thin films were examined. While the real dielectric constant, imaginary dielectric constant, dielectric loss and optical conductivity values of the CdSe were 1.24, 0.05, 0.004 and 1.38x10 14 , those of CdS thin film were 1.51, 0.94, 0.64 and 2.49x10 15 .

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Determination of the basic optical parameters of CdX (X=Se, S) thin films prepared with low concentration precursor solutions

ÜNAL¹

2023

JCHAR

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“…Notably, the forward and reverse currents of the photodiode were approximately the same under the various light intensities. In addition, a nonsaturation state was observed under reverse bias under both dark and light intensities, which may be explained by the decrease in barrier height due to image force and interface states [55,56]. As the voltage in reverse bias increased, carriers began to accumulate between the contact and the active layer, leading to a decrease in barrier height.…”

Section: Electrical Analysis Of the Ag/mnpc/gc/ag Photodiodementioning

confidence: 98%

“…Double logarithmic I-V graphs of the Ag/MnPc/GC/Ag photodiode for the dark environment and light intensities of 20-100 mW.cm −2 are given in figures 7(a)-(f). Figure 7(a) shows that there are four distinct regions in the dark environment: ohmic, space-charge-limited current (SCLC), trap filling limit (TFL), and trap-free SCLC [55,67,68]. Region I, with a gradient of 0.26, is the low voltage region and the current rises slowly due to the density of the effective carrier being lower than the density of the thermal carrier, where the ohmic mechanism can be associated with the distribution of the trap centres [69].…”

Section: Electrical Analysis Of the Ag/mnpc/gc/ag Photodiodementioning

confidence: 99%

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

et al. 2023

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The aim of this work is to provide an alternative to optoelectronic devices that use carbon and organic materials. To achieve this, we coated a modified MnPc organic semiconductor compound onto a graphite-like carbon (GC) thin film using the thermal evaporation technique, and fabricated an organic-based, highly light-sensitive MnPc/GC hybrid heterojunction. The heterojunction had a transmittance of approximately 60% in the visible region, an absorption coefficient of ~106 m-1, and an energy band gap of 2.6 eV. Subsequently, Ag contacts were grown on the surface of each layer, and the Ag/MnPc/GC/Ag photodiode was subjected to fundamental electrical analysis at various light intensities and a ±3 V applied potential. Analysis in a dark environment revealed that the photodiode had a rectification ratio of 2.59 x 103, a series resistance of 28 Ω, and a shunt resistance of 4.17 x 104 Ω, as calculated from Ohm's law. The diode ideality factor and barrier height of the photodiode were determined from thermionic emission theory to be 5.60 and 0.71 eV, respectively, and it was observed that these decreased with increasing light intensity. The photodetector parameters of the MnPc/GC hybrid photodiode were determined under positive and negative applied potentials at various light intensities. The highest photocurrent, photoconductive responsivity, photosensitivity, and specific detectivity were determined to be 1.512 x 10-1 A, 11.52 A.W-1, 9.83 x 105, and 2.48 x 1012 Jones, respectively, which were significantly higher than those reported in literature for organic and inorganic-based photodiodes. Based on the findings, it was concluded that the Ag/MnPc/GC/Ag photodiode holds promise as an alternative for sensors, solar cells, photodetectors, and optoelectronic communications applications.

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“…Figure 2: a) Absorption coefficient versus wavelength and b) (𝛼ℎ𝑣) # versus ℎ𝑣 graphs of the CdCuO andZnCuO composite thin films. The extinction coefficient (k) and refractive index (n) values of CdCuO and ZnCuO composite thin films are calculated with equation 5 and 6 using the relationship with the absorption coefficient (α)[25,26] and are demonstrated in Figure3.…”

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confidence: 99%

Optical characterization of ZnCuO and CdCuO composite thin films prepared using equal ratio of Zn, Cd and Cu.

AKTAŞ¹

2023

JCHAR

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In this work, the optical properties of electrochemically deposited ZnCuO and CdCuO metal oxide composite semiconductors were investigated in the 300 -850 nm wavelength range using UV-vis spectroscopy. The highest transmission (T%) value of the ZnCuO was 20%, while that of CdCuO was approximately 82%. The average reflectance values of ZnCuO and CdCuO were 8.14% and 3.8%, respectively. The maximum absorption coefficient, energy band gap, average extinction coefficient, average refractive index, average real dielectric constant, average imaginary dielectric constant, average dielectric loss and maximum optical conductivity values of ZnCuO composite thin film were 8 x 10 6

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Synthesis and optoelectronic characterization of coronene/CdO self-powered photodiode

Cited by 9 publications

References 58 publications

Determination of the basic optical parameters of CdX (X=Se, S) thin films prepared with low concentration precursor solutions

Determination of the basic optical parameters of CdX (X=Se, S) thin films prepared with low concentration precursor solutions

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

Optical characterization of ZnCuO and CdCuO composite thin films prepared using equal ratio of Zn, Cd and Cu.

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