Synthesis and optoelectronic properties of p-type nitrogen doped ZnSe nanobelts

ZnSe‐Based Longitudinal Twinning Nanowires

“…Especially 1D semiconductor nanowires, which have tremendous impacts on the development of modern science and technology, have been a hotspot. ZnSe (bulk crystal E g = 2.7 eV at 300 K), as one of the key semiconductor materials for applications such as green laser diodes, photodetectors, field effect transistors (FETs), and solar cells has been widely investigated in recent years. ZnSe nanowires can be prepared by various methods, such as thermal evaporation, solution‐based, pulsed laser deposition, and so on.…”

High performance UV sensor based on individual ZnO nanowire and photoelectric properties of individual ZnO nanowire surface in different atmospheres

“…It is well known that the recovery speed of photoresponse is governed by adsorption and desorption of oxygen molecules on the surface [12,19,20,21]. Because of the high surface-to-volume ratio, the surface states can significantly affect the photogenerated carriers and, in turn, the transport and photoconductivity of the ZnO nanowire.…”

Rational design of comb-like 1D–1D ZnO–ZnSe heterostructures toward their excellent performance in flexible photodetectors

“…3 However, a single-component 1D ZnX photodetector showed unsatisfactory photodetection performance because of the intrinsic defects (O/S/Se vacancies and Zn interstitials) and a narrow photoresponse spectrum. [3][4][5][6][7] Several strategies, such as heteroatom doping, [8][9][10][11][12] construction of heterostructures, [13][14][15] and regulation of morphology, 16,17 have been developed to improve the performance of photodetection. Among them, the construction of a multi-component ZnX heterostructure is considered a facile and efficient method to regulate the performance of photodetection.…”