Synthesis and Patterning of Gold Nanostructures on InP and GaAs via Galvanic Displacement

Abstract

Plugging into III–Vs: Crystalline, sub‐100 nm gold nanoparticles are formed via simple galvanic displacement reactions on InP and GaAs surfaces (see images). The reactions require only four ingredients (gold salt, semiconductor, water, and dilute acid) and result in firmly bound gold nanoparticle arrays on the surface. The chemistry can be patterned via AFM‐tip‐mediated scribing of the sub‐5‐nm‐thick surface oxide to reveal the underlying semiconductor, leading to galvanic displacement only in the exposed areas.

Preparation of platinum-based 'cauliflower microarrays’ for enhanced ammonia gas sensing

“…Chen et al [27] synthesized 3D-shaped nanoflowers of tin oxide semiconductor using thermal pyrolysis of a tin organometallic precursor. Nizhad et al [28] produced gold nanostructures of various shapes and geometries on a semiconductor wafer, such as indium phosphide and gallium arsenide via galvanic displacement reactions. The synthesis of these…”

Programmable synthesis of shape-, structure-, and composition-modulated one-dimensional heterostructures by galvanic displacement reaction

“…GDR to form various metals such as Au, Ag, Pb, and Pt has been mainly demonstrated. [11][12][13][17][18][19][20][21][22][23][24] A few works have been reported for semiconductors. 8,[25][26][27][28] Moreover, GDR is a unique deposition tool that can facilitate the production of nanoparticles, hollow nanoparticles, nanotubes, or monolayer coatings.…”

Controlled growth of gold nanocrystals on biogenic As–S nanotubes by galvanic displacement

“…Ni, Pd, Au) with semiconductor (e.g. InP, GaAs, Si, Ge) surfaces at the nanoscale level [32][33][34]. Here, we demonstrated the in situ formation of Au nanocrystals on the surface of As-S nanotubes via galvanic displacement.…”