Synthesis and photoluminescence properties of NUV-excited NaBi(MoO4)2: Sm3+ phosphors for white light emitting diodes

Europium doped-double sodium bismuth molybdate nanoparticles as contrast agents for luminescence bioimaging and X-ray computed tomography

“…See DOI: https://doi.org/ 10.1039/d2qi02664c a Instituto de Ciencia de Materiales de Sevilla (CSIC-Universidad de Sevilla), c/ Américo Vespucio, 49, 41092 Sevilla, Spain. E-mail: mjurado@icmse.csic.es b Centro Andaluz de Biología del Desarrollo (CABD), Universidad Pablo de Olavide (UPO), Molecular Biology and Biochemical Engineering Department, CSIC/UPO/JA, Carretera de Utrera Km1, 41013-Sevilla, Spain (MoO 4 ) 2 -based phosphors involve solid-state reactions, 12,13 coprecipitation, [14][15][16] or sol-combustion methods, 17 yielding particles with a heterogeneous size and shape and in most cases, a high aggregation degree.…”

“…This might be due to the lack of synthesis methods suitable to produce particles with the characteristics required for in vivo bioapplications, which include a uniform shape, narrow size distribution within the nanometer range, dispersibility in physiological media, and biocompatibility. In fact, most reported procedures for the preparation of NaBi(MoO 4 ) 2 -based phosphors involve solid-state reactions, 12,13 coprecipitation, 14–16 or sol-combustion methods, 17 yielding particles with a heterogeneous size and shape and in most cases, a high aggregation degree.…”

Tunable nonlinear absorption and optical limiting behavior of NaBi(MoxW1−xO4)2 single crystals with ratio of Molybdenum/Tungsten

“…NaBi(WO 4 ) 2 and NaBi(MoO 4 ) 2 are two members of this group and the device applications of these compounds are increasing in recent years. Device application studies indicated that NaBi(MoO 4 ) 2 and NaBi(WO 4 ) 2 may be used in light emitting diodes, scintillators, temperature sensors, gas sensing devices [6][7][8][9][10][11]. Both compounds crystallize in tetragonal structure with reported lattice parameters of a = b = 5.272 Å, c = 11.577 Å for NaBi(MoO4)2 and a = b = 5.265 Å, c = 11.429 Å for NaBi(WO4)2 [12][13][14].…”

Growth and temperature tuned band gap characteristics of NaBi(MoO4)2 single crystal

“…NaBi(MoO 4 ) 2 semiconductor compound, one of the member of this group, has become an important material used in optoelectronic applications in recent years. It has attracted research attention due to its particularly effective properties like temperature sensitive performance [9], high luminous efficiency [10], good gas sensing peformance [11], fast response time and good anti-irradiation [12]. Studies on NaBi(MoO 4 ) 2 material have shown its usefulness in various technological applications such as lightemitting diodes [12], temperature sensors [13], gas-sensing materials [14] and optical modulators [15].…”