Synthesis and physical properties of the system (GeS2)80−x(Ga2S3)20:xPr glasses

Frumarová, Božena; Oswald, J.; Krečmer, P.; Frumar, M.; Černý, V.; Smrĉka, V.

doi:10.1016/0925-3467(96)00029-8

Cited by 30 publications

(7 citation statements)

References 9 publications

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“…The experimental oscillator strengths f exp of electric-dipole transitions of Dy 3+ ions in Ge 25 Ga 5 Sb 5 Se 65 glass are calculated from the room temperature transmission spectra using the following equation [17]:…”

Section: Discussionmentioning

confidence: 99%

Dy3+-doped Ge–Ga–Sb–Se glasses for 1.3μm optical fiber amplifiers

Yang

Chen

2005

Journal of Non-Crystalline Solids

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Section: Discussionmentioning

confidence: 99%

Dy3+-doped Ge–Ga–Sb–Se glasses for 1.3μm optical fiber amplifiers

Yang

Chen

2005

Journal of Non-Crystalline Solids

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“…Since the hydroxyl impurities are harmful to fiberoptical system, efforts should be devoted to removing these impurities by purification with specific techniques. In addition, the IR cut-off edge k IR (defined as a wavelength at which 50% of the transmission at shorter wavelength) of this glass which is due to the multi-phonon absorption Ge-S and Ga-S bonds vibration [18], is at about 11.5 lm. And it does not shift with the compositional change in this system.…”

Section: Optical Propertiesmentioning

confidence: 99%

Structural dependence of ultrafast third-order optical nonlinearity of Ge–Ga–Ag–S chalcogenide glasses

Dong

Tao

Chu

et al. 2008

Journal of Non-Crystalline Solids

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“…These two additional peaks also arise from vibrational modes of the GeS 4/2 tetrahedra. 36 The shift wavenumbers can be due to the presence of compressive stress in the film which is expected for films deposited by RF sputtering. In the IR spectra of the GeS 2 , there is one peak with broad and low intensity at ∼800 cm -1 .…”

Section: Surface Morphology and Thickness Of The Thin Filmmentioning

confidence: 99%

Structural Properties of Lithium Thio-Germanate Thin Film Electrolytes Grown by Radio Frequency Sputtering

Seo

Martin

2011

Inorg. Chem.

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In this study, lithium thio-germanate thin film electrolytes have been successfully prepared by radio frequency (RF) magnetron sputtering deposition in Ar gas atmospheres. The targets for RF sputtering were prepared by milling and pressing appropriate amounts of the melt-quenched starting materials in the nLi2S + GeS2 (n = 1, 2, and 3) binary system. Approximately 1 μm thin films were grown on Ni coated Si (Ni/Si) substrates and pressed CsI pellets using 50 W power and 25 mtorr (3.3 Pa) Ar gas pressures to prepare samples for Raman and Infrared (IR) spectroscopy, respectively. To improve the adhesion between the silicon substrate and the thin film electrolyte, a sputtered Ni layer (120 nm) was used. The surface morphologies and thickness of the thin films were determined by field emission scanning electron microscopy (FE-SEM). The structural properties of the starting materials, target materials, and the grown thin films were examined by X-ray diffraction (XRD), Raman, and IR spectroscopy. Disciplines Materials Science and Engineering | Physical Chemistry CommentsReprinted with permission from Inorganic Chemistry 50 (2011) ABSTRACT: In this study, lithium thio-germanate thin film electrolytes have been successfully prepared by radio frequency (RF) magnetron sputtering deposition in Ar gas atmospheres. The targets for RF sputtering were prepared by milling and pressing appropriate amounts of the meltquenched starting materials in the nLi 2 S þ GeS 2 (n = 1, 2, and 3) binary system. Approximately 1 μm thin films were grown on Ni coated Si (Ni/Si) substrates and pressed CsI pellets using 50 W power and 25 mtorr (∼3.3 Pa) Ar gas pressures to prepare samples for Raman and Infrared (IR) spectroscopy, respectively. To improve the adhesion between the silicon substrate and the thin film electrolyte, a sputtered Ni layer (∼120 nm) was used. The surface morphologies and thickness of the thin films were determined by field emission scanning electron microscopy (FE-SEM). The structural properties of the starting materials, target materials, and the grown thin films were examined by X-ray diffraction (XRD), Raman, and IR spectroscopy.

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Synthesis and physical properties of the system (GeS2)80−x(Ga2S3)20:xPr glasses

Cited by 30 publications

References 9 publications

Dy3+-doped Ge–Ga–Sb–Se glasses for 1.3μm optical fiber amplifiers

Dy3+-doped Ge–Ga–Sb–Se glasses for 1.3μm optical fiber amplifiers

Structural dependence of ultrafast third-order optical nonlinearity of Ge–Ga–Ag–S chalcogenide glasses

Structural Properties of Lithium Thio-Germanate Thin Film Electrolytes Grown by Radio Frequency Sputtering

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