2008
DOI: 10.1063/1.2840018
|View full text |Cite
|
Sign up to set email alerts
|

Synthesis and room-temperature ferromagnetism of Zn0.96Mn0.04O∕ZnO coaxial nanocable and Zn0.96Mn0.04O film

Abstract: Zn 0.96 Mn 0.04 O ∕ Zn O coaxial nanocable and Zn0.96Mn0.04O film were prepared by two-step method and magnetron sputtering, respectively. The x-ray diffraction analysis reveals that Mn is incorporated well into the wurtzite ZnO without formation of Mn or Mn oxide. The high resolution transmission electron microscopy image and the selected-area electron diffraction pattern demonstrate that both ZnO and Zn0.96Mn0.04O layers are single crystalline and an epitaxial growth is achieved between Zn0.96Mn0.04O and ZnO… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
5
0

Year Published

2009
2009
2021
2021

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 13 publications
(5 citation statements)
references
References 18 publications
0
5
0
Order By: Relevance
“…19,[27][28][29][30][31][32] ZnO has been also considered as a promising diluted magnetic semiconductor (DMS) by introducing with 1~10 % of transitional metals (TM). 33,34 Most of the previous studies focus on the optical, electronic and ferromagnetic behavior of semiconductor materials doped by 1~10 % of transitional metals (TM) (such as Fe, Co, or Ni). 35,36 But these unpaired spin electrons can yield a unprecedently higher speed for transportation than that in traditional electronic devices.…”
Section: Resultsmentioning
confidence: 99%
“…19,[27][28][29][30][31][32] ZnO has been also considered as a promising diluted magnetic semiconductor (DMS) by introducing with 1~10 % of transitional metals (TM). 33,34 Most of the previous studies focus on the optical, electronic and ferromagnetic behavior of semiconductor materials doped by 1~10 % of transitional metals (TM) (such as Fe, Co, or Ni). 35,36 But these unpaired spin electrons can yield a unprecedently higher speed for transportation than that in traditional electronic devices.…”
Section: Resultsmentioning
confidence: 99%
“…Zinc oxide has extensive commercial applications in optoelectronics, microelectronics, sensors and transducers, biomedicine, and space applications [11][12][13][14][15][16][17]. Further, ZnO can also act as a diluted magnetic semiconductor (DMS), since upon doping of transition metal (TM) it shows ferromagnetic behaviour even at room temperature [18][19][20]. The mechanisms of room temperature ferromagnetism (RT-FM) is due to defect induced bound magnetic polarons (BMPs) and carrier mediated exchange interaction [21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…10 ZnO/BeO nanocables have been fabricated using a two-step method and improved optical properties were achieved. 11 In addition, nanocables made of ZnO/ZnGa 2 O 4 , 12 ZnO/Eu 2 O 3 , 13 ZnO/SiO 2 , 14 Zn 0.96 Mn 0.04 O/ZnO, 15 ZnO/ZnSe, 16 ZnO/ZnS and ZnO/CdS, 17,18 SnO/ZnO, 19,20 ZnSb 2 O 4 /ZnO, 21 In 2 O 3 /ZnO, 22 and ZnO/CdTe/CdS (ref. [23][24][25][26] have also been reported.…”
Section: Introductionmentioning
confidence: 99%