Synthesis and Structures of Bis(2‐dimethylaminoethyl)amine Adducts of Strontium Bis(2,2,6,6‐tetramethylheptane‐3,5‐dionate) and Their Use in the CVD of Cubic Strontium‐Doped Hafnium Dioxides

Luo, Bing; Yu, Dan; Kucera, Benjamin E.; Campbell, Stephen A.; Gladfelter, Wayne L.

doi:10.1002/cvde.200606577

Cited by 15 publications

(7 citation statements)

References 44 publications

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“…The TG curve of precursor showed significant weight loss with an endothermic peak on the DTA curve at 150–180 °C. The residues of 3.2% indicated that thermal decomposition occurred with concomitant of neutral ligand dissociation from the indium complex, and similar decomposition patterns were reported . To determine the optimum dose of indium precursor for the self-limiting reaction, indium oxide films were deposited on a Si(100) substrate with increasing precursor amounts and reactant pulsing times at a temperature of 200 °C (Figure c).…”

Section: Resultssupporting

confidence: 58%

Metastable Rhombohedral Phase Transition of Semiconducting Indium Oxide Controlled by Thermal Atomic Layer Deposition

Lee

Sheng

et al. 2020

Chem. Mater.

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Indium oxide (In 2 O 3 ) thin films were deposited via thermal atomic layer deposition (ALD) to exploit their potential as semiconductors in thin-film transistors (TFTs), using a new liquid t y p e i n d i u m c o m p l e x p r e c u r s o r ( I n -(CH 3 ) 3 [CH 3 OCH 2 CH 2 NHtBu]). In 2 O 3 films were deposited successfully at lower temperatures and exhibited a satisfactory growth rate (∼0.35 Å per cycle). In addition, we investigated the effect of deposition temperature from 100 to 250 °C on the microstructure and chemical and physical properties of In 2 O 3 films. Interestingly, the In 2 O 3 film had a clear rhombohedral structure at deposition temperatures from 100 to 150 °C. For the 200 and 250 °C deposition temperatures, the phase of In 2 O 3 transformed to a cubic structure. The crystalline structure of the In 2 O 3 film was extremely sensitive to deposition temperatures, giving rise to a wide range of tunable physical and electrical properties. Based on a comparison of comprehensive structural transmission electron microscopy analysis, density functional theory calculations, and systematic experimental measurements, we explored the possibility of TFTs with an ALD-processed In 2 O 3 layer as a semiconductor.

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Section: Resultssupporting

confidence: 58%

Metastable Rhombohedral Phase Transition of Semiconducting Indium Oxide Controlled by Thermal Atomic Layer Deposition

Lee

Sheng

et al. 2020

Chem. Mater.

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“…6,7 One solution for obtaining the higher permittivity phases is to incorporate small amounts ͑Ͻ20 atom %͒ of other elements into the host HfO 2 film. 8 HfO 2 has been doped with Si, 9 Al, 10 N, 11 Sr, 12 Gd, and Er, 13 as well as Dy, 13,14 Sc, 14 and Y. 15,16 For example, permittivity values of over 25 have been reported for sputtered yttrium-doped HfO 2 ͑HfO 2 :Y͒ films with low yttrium content of 4 atom %.…”

mentioning

confidence: 97%

Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films

Niinistö

Kukli

Sajavaara

et al. 2009

Electrochem. Solid-State Lett.

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Yttrium-doped HfO 2 films were grown by atomic layer deposition via alternating HfO 2 and Y 2 O 3 growth cycles. Precursors used were ͑CpMe͒ 2 Hf͑OMe͒Me or Hf͑NEtMe͒ 4 and ͑CpMe͒ 3 Y together with ozone. The 5-8 nm thick HfO 2 :Y films were amorphous in as-deposited state and crystallized as high-permittivity cubic/tetragonal polymorphs upon annealing. The best combination of low leakage current of 10 −7 A/cm 2 at 1 V and high capacitance was achieved with the films grown from Hf͑NEtMe͒ 4 , with yttrium content being about 6-7 atom %. The highest permittivity values measured for these films reached 30.Hf-based high-permittivity ͑high-k͒ oxides, especially those deposited by atomic layer deposition ͑ALD͒, have been extensively researched for complementary metal oxide semiconductor devices, and recently they have been adapted in production of the most advanced microprocessors. 1 Capacitor dielectrics in dynamic random access memory devices also have demanding requirements for capacitance equivalent oxide thickness ͑CET, also t ox is used͒ and leakage current, 2,3 and among others, 4,5 Hf-based materials are strong candidates there too.As the permittivity of HfO 2 strongly depends on its crystallographic phase, it is of utmost importance to obtain HfO 2 films in cubic or tetragonal polymorphs, whose permittivity values exceed 30, instead of the low ͑ϳ18͒ permittivity monoclinic phase. 6,7 One solution for obtaining the higher permittivity phases is to incorporate small amounts ͑Ͻ20 atom %͒ of other elements into the host HfO 2 film. 8 HfO 2 has been doped with Si, 9 Al, 10 N, 11 Sr, 12 Gd, and Er, 13 as well as Dy, 13,14 Sc, 14 and Y. 15,16 For example, permittivity values of over 25 have been reported for sputtered yttrium-doped HfO 2 ͑HfO 2 :Y͒ films with low yttrium content of 4 atom %. 15 However, the key technology for dielectric film growth is ALD, recognized by the semiconductor industry to be capable of growing ultrathin films with perfect conformality and thickness accuracy. 17,18 The most important factor in developing a successful ALD process is the choice of precursors. For the multicomponent oxide film growth, such as HfO 2 :Y, feasible processes for both metal oxides, HfO 2 and Y 2 O 3 , should be available. The growth temperature can strongly affect the dielectric properties due to variations in the film purity and crystal growth intensity. Because in an ALD process the precursor decomposition should be avoided, the applicable temperature window often remains narrow.In this study, high-k HfO 2 :Y films were grown by ALD. In order to compare the effect of precursor chemistry and growth temperature, an alkylamido-type precursor, Hf͑NEtMe͒ 4 ͑TEMAHf͒, was employed at a temperature of 275°C, while a cyclopentadienyl-type precursor, ͑CpMe͒ 2 Hf͑OMe͒Me, was applied at 350°C. TEMAHfbased processes are known to suffer from thermal decomposition of the metal precursor at temperatures around 300°C, 19 whereas ͑CpMe͒ 2 Hf͑OMe͒Me exhibits self-limited growth even at 400°C. 20 For yttrium doping, a precursor behav...

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“…CVD of strontium-doped cubic HfO 2 layers was carried out using as precursors the liquid hepta-coordinated amine adduct [Sr(thd) 2 (tmdta)] (5, tmdta = NH(CH 2 CH 2 NMe 2 ) 2 ) in combination with [Hf(OBu-t) 4 ], in a cold-wall low-pressure reactor at 115-175 ∘ C. Scheme 1 shows the synthesis of 5, which was derived from the intermediate solvate by the elimination of EtOH at 130 ∘ C. The high-dielectric strontium hafnium oxide films have Sr/(Sr + Hf) atomic ratios of 0-0.83 26 …”

Section: Group 2 Elements (Mg Ca Sr Ba)mentioning

confidence: 99%

Advances in Deposition of Main‐Group Metal Oxides and Rare‐Earth Oxides from Metal Enolates

Lang

Adner

Georgi

2016

Patai's Chemistry of Functional Groups

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This chapter is an update of a review published by our group elsewhere in Patai's Series; in addition, in this volume, chapters present the recent advances in the deposition of metals and transition‐metal oxides, all derived from metal enolates. Materials featuring group 3 ‐ 12 elements have attracted great technological and scientific attention during the last decades because of their outstanding chemical and physical properties. They are widely used in industry, including a variety of catalyst supports, coatings, as dielectrics for semiconducting devices, and as sensors.

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Synthesis and Structures of Bis(2‐dimethylaminoethyl)amine Adducts of Strontium Bis(2,2,6,6‐tetramethylheptane‐3,5‐dionate) and Their Use in the CVD of Cubic Strontium‐Doped Hafnium Dioxides

Cited by 15 publications

References 44 publications

Metastable Rhombohedral Phase Transition of Semiconducting Indium Oxide Controlled by Thermal Atomic Layer Deposition

Metastable Rhombohedral Phase Transition of Semiconducting Indium Oxide Controlled by Thermal Atomic Layer Deposition

Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films

Advances in Deposition of Main‐Group Metal Oxides and Rare‐Earth Oxides from Metal Enolates

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