Synthesis and study of structural properties of Sn doped ZnO nanoparticles

Abstract

Pure and Sn-doped ZnO nanostructures were synthesized by simple chemical solution method. In this method we used zinc nitrate and NaOH as precursors. Sn doping content in ZnO was taken with the ratio 0, 5, 10, 15 and 20 percent by weight. Physical properties of Sn-doped ZnO powder were studied by XRD analysis which revealed that Sn doping had a significant effect on crystalline quality, grain size, intensity, dislocation density and strain. The calculated average grain size of pure ZnO was 21 nm. The best crystalline structure was found for 0 wt.%, 5 wt.% and 10 wt.% Sn doping as observed by FESEM and XRD. However, higher Sn-doping (>10 wt.%) degraded the crystallinity and the grain size of 27.67 nm to 17.76 nm. The structures observed in FESEM images of the samples surfaces were irregular and non-homogeneous. EDX depicted no extra peak of impurity and confirmed good quality of the samples.

Ti1-Sn O2 nanofilms: Layer-by-layer deposition with extended Sn solubility and characterization

“…Furthermore, the synthesis of Sn-TiO 2 substitutional alloy with high Sn concentration is difficult as Sn tends to agglomerate at high concentration [23,24] due to its low melting temperature [25].…”

Structural characterization of PVDF/PVA polymer blend film doped with different concentration of NiO NPs for photocatalytic degradation of malachite green dye under visible light

“…It can be seen that the increase in δ which measured the defects and vacancies in the crystal and it is measure the crystallinity. 26 From Table 1, the dislocation density and lattice strain increase with addition of NiO NPs that means that the degree of crystallinity increased compared to PVDF/PVA blend. Figure 4 shows FTIR-ATR of PVDF and PVA.…”

Influence of Sn doping on the optoelectronic properties of ZnO nanoparticles

“…30 The smaller ionic radii Sn 4+ (0.69 Å), substitutes Zn 2+ (0.69 Å) or insert into the vacant Zn 2+ sites in the ZnO lattice. This smallersized Sn 4+ makes stronger interaction with O 2− in the lattice, 12,31 which induces strain in the lattice leading to FWHM broadening with intensity reduction of all the diffraction patterns. This substitution or insertion was not site-selective, so several diffraction patterns shied with increasing doping percent.…”

“…The radius of Sn 4+ is 0.071 nm which is similar to that of Zn 2+ (0.074 nm) and this helps in the effective replacement of Zn ions. 1,2,12 Sn-doped ZnO can be effectively synthesized and its physical and chemical properties have been examined by several groups. 18,19,[25][26][27][28] Still, a systematic study can enrich this vast topic and facilitate future improvements and ne-tuning.…”