Synthesis and Study the Structure, electrical and optical properties of Bi2-xCdxSr2Ca2Cu3O10+ δ thin film Superconductors

Hussein, Bushra H.; Mahdi, Shatha H.; Makki, Sameer A.; Al-Maiyaly, Bushra K. H.

doi:10.1016/j.egypro.2018.11.169

Cited by 10 publications

(4 citation statements)

References 8 publications

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“…We attributed the decrease in the energy gap of the film after increasing the laser energy density to increasing the grain size as well as to grains agglomeration effect. The obtained values of Eg at room temperature are in good agreement with reported data [20]. This result could be attributed to the grains agglomeration found for film deposited at 8 J/cm 2 and also due to the high resistivity of BSCCO film.…”

Section: Resultssupporting

confidence: 91%

Preparation of Bi2Sr2CaCu2Ox Thin Film by Pulsed Laser Deposition for Optoelectronic Devices Application

Ismail

Hasan

Shaker

2021

Silicon

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In this study, we have prepared Bi2Sr2CaCu2Ox (BSCCO) nanostructure films by pulsed laser deposition technique (PLD). The structural and optical properties of nanostructured Bi2Sr2CaCu2Ox film were investigated. X-ray diffraction (XRD) studies of the films prepared at 6.5 and 8 J/cm 2 showed that the films are crystalline in nature with orthorhombic phase.Scanning electron microscopy (SEM) investigation confirmed that the deposited film has spherical grains and the mean grain size of the film increased from 150 nm to 250 nm as laser energy density increased from 6.5 to 8 J/cm 2 . The optical energy gap of the film decreased from 2.24 to 1.7eV when the energy density increased. The optoelectronic properties of the Bi2Sr2CaCu2Ox/Si heterojunction photodetector have been investigated. The photodetectors exhibited rectification properties and the ideality factor of the photodetectors deposited 6.5 and 8 J/cm 2 were 2.3 and 4.2, respectively. The on/off ratio of the photodetectors was found to be 761 and 385 for the photodetectors prepared with6.5 and 8 J/cm 2 , respectively. A responsivity of 514 mA/W at 860 nm was found for the photodetector prepared with 6.5 J/cm 2 without using post annealing and/or buffer layer.

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Section: Resultssupporting

confidence: 91%

Preparation of Bi2Sr2CaCu2Ox Thin Film by Pulsed Laser Deposition for Optoelectronic Devices Application

Ismail

Hasan

Shaker

2021

Silicon

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“…Ismail et al [44] obtained a refractive index for BSCCO-2212 thin films with a real part around 2 and an imaginary part of 0.2-0.5 depending on the growing conditions. Similar values are obtained by Hussein et al [45] for thin films of BSCCO-2223 with an almost constant real part of the refractive index around 1.8 and an imaginary part around 0.4-0.5. None of these works reports the dependency of n and κ with wavelength but it is observed that the optical properties of the samples change depending on the sample growth method and conditions.…”

Section: Resultssupporting

confidence: 89%

“…To our knowledge, there are only a few reports on the optical properties of BSCCO-2212 in the visible range in the literature [43][44][45]. For bulk samples, a refractive index for BSCCO-2212 around 1.9-2 for the real part and 0.3-0.5 for the imaginary part for an illumination wavelength of 488 nm has been reported by polarimeter measurements [43].…”

Section: Resultsmentioning

confidence: 99%

Apparent color and Raman vibrational modes of the high-temperature superconductor Bi₂Sr₂CaCu₂O 8+δ exfoliated flakes

Figueruelo-Campanero,

del Campo,

Nieva

et al. 2024

2D Mater.

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Studying and controlling the properties of individual exfoliated materials is one of the first steps towards the fabrication of complex van der Waals systems. In this work, we present a systematic study of optical properties and micro-Raman spectroscopy on exfoliated flakes of the high-temperature superconductor Bi2Sr2CaCu2O8+δ (BSCCO-2212). We demonstrate that these are quick and non-invasive techniques for studying air sensitive materials. The apparent color of BSCCO-2212 exfoliated flakes on SiO2/Si has allowed a rough and fast identification of the number of layers. By analyzing the optical contrast of different flakes we determined the complex refractive index in the visible range and found the optimal combination of illumination wavelength and substrate properties for the identification of flakes with different thickness. In addition, we report the hardening of the most characteristic Raman modes as flake thickness decreases, possibly caused by strain in the BiO and CuO2 planes. Moreover, the evolution of the Raman modes establishes a second approach to determine the thickness of BSCCO-2212 thin flakes. As BSCCO-2212 is a challenging material due to its sensitivity to ambient conditions, the present work provides a guide for the fabrication and characterization of complex van der Waals systems paving the way for studying heterostructures based on unconventional superconductors in the 2D limit.

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“…17 shows the 1/C 2 and voltage characteristics of GaN films deposited at 1064 nm laser wavelength. The fabricated GaN on the Psi film was an abrupt junction, and the value of the built-in potential decreased from 0.34 to 0.31 eV after GaN was deposited at a laser wavelength of 1064 nm [70][71][72][73][74].…”

Section: Electrical Propertiesmentioning

confidence: 99%

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Jabbar¹,

Fakhri²,

Razzaq³

et al. 2023

Journal of Renewable Materials

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Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5-15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm 2 , and 24% hydrofluoric acid. The substrate exhibited two highly cubic crystalline structures at (200) and (400) orientations and yellow visible band photoluminescence, and homogeneous pores formed over the entire surface. The pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and morphologically. The GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the (002) plane. Spectroscopic properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band (374 nm) related to GaN material and in the near-infrared band (730 nm) related to the Psi substrate. The topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 nm. The GaN/Psi surface showed a cauliflower-like morphology, and the built-in voltage decreased from 3.4 to 2.7 eV after deposition. The fabricated GaN/Psi film exhibited good electrical characteristics.

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Synthesis and Study the Structure, electrical and optical properties of Bi2-xCdxSr2Ca2Cu3O10+ δ thin film Superconductors

Cited by 10 publications

References 8 publications

Preparation of Bi2Sr2CaCu2Ox Thin Film by Pulsed Laser Deposition for Optoelectronic Devices Application

Preparation of Bi2Sr2CaCu2Ox Thin Film by Pulsed Laser Deposition for Optoelectronic Devices Application

Apparent color and Raman vibrational modes of the high-temperature superconductor Bi₂Sr₂CaCu₂O 8+δ exfoliated flakes

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

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Synthesis and Study the Structure, electrical and optical properties of Bi2-xCdxSr2Ca2Cu3O10+ δ thin film Superconductors

Cited by 10 publications

References 8 publications

Preparation of Bi2Sr2CaCu2Ox Thin Film by Pulsed Laser Deposition for Optoelectronic Devices Application

Preparation of Bi2Sr2CaCu2Ox Thin Film by Pulsed Laser Deposition for Optoelectronic Devices Application

Apparent color and Raman vibrational modes of the high-temperature superconductor Bi2Sr2CaCu2O 8+δ exfoliated flakes

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

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Apparent color and Raman vibrational modes of the high-temperature superconductor Bi₂Sr₂CaCu₂O 8+δ exfoliated flakes