We report on the synthesis, characterization, and application of TiN (MXene), a two-dimensional transition metal nitride of MX type. Synthesis of nitride-based MXenes (MN) is difficult due to their higher formation energy from MAN and poor stability of MN layers in the etchant employed, typically HF. Herein, the selective etching of Al from ternary layered transition metal nitride TiAlN (MAX) and intercalation were achieved by immersing the powder in a mixture of potassium fluoride and hydrochloric acid. The multilayered TiNT (T is the surface termination) obtained was sonicated in DMSO and centrifuged to obtain few-layered TiNT. MXene formation was verified, and the material was completely characterized by Raman spectroscopy, XRD, XPS, FESEM-EDS, TEM, STM, and AFM techniques. Surface-enhanced Raman scattering (SERS) activity of the synthesized TiNT was investigated by fabricating paper, silicon, and glass-based SERS substrates. A Raman enhancement factor of 10 was demonstrated using rhodamine 6G as the model compound with 532 nm excitation wavelength. Detection of trace level explosives with a simple paper-based SERS substrate with TiN (MXene) as active material was also illustrated.