The thermoelectric properties of W-substituted CrSi 2 were studied. Polycrystalline samples of hexagonal C40-structured Cr 1-x W x Si 2 (x = 0.05, 0.10) were synthesized by arc melting and spark plasma sintering followed by heat treatment. Compared to non-substituted CrSi 2 , the lattice thermal conductivity was reduced from 9.0 to 4.6 W m −1 K −1 by W substitution because of enhanced phonon-impurity scattering. However, the power factor was slightly reduced by W substitution, as with Mo substitution. The thermoelectric gure of merit, zT, increased with increasing W content because of the reduced thermal conductivity, reaching 0.19 at 670 K. We analyzed the observed electrical properties using a theoretical model based on the Boltzmann transport equation. The effective mass of CrSi 2 increases from 2.5 to ~3.5 by W or Mo substitution, indicating that W or Mo substitution affects the band structure of CrSi 2 , which reduces the power factor.