Topological insulators (TIs) form a class of materials whose properties are associated with nongeneric quantum effects. Phenomenologically, TIs are semiconductors in the bulk, but possess metallic surface states of a distinctive quality. These surface states are protected by the topology of the bulk electronic structure. [1] Their momentum (propagation direction) and their spin are locked orthogonally. This stabilization can only be broken by strong perturbation, e.g., by an energy exceeding the topologically nontrivial bandgap of the bulk. As a result, these surface electrons are protected against backscattering from nonmagnetic impurities, [2] leading to dissipation-free charge transport and preservation of spin orientation under suitable conditions. [3] Therefore, TIs are envisioned as promising materials for high-performance spin field-effect transistors [4] and as quantum bits in quantum computing. [5] Despite the strong interest in TIs, the number of TIs experimentally proven as well as useable under "real" conditions is still quite limited.