Synthesis, crystal growth and characterization of InP

Coquillé, R.; Toudic, Y.; Gauneau, M.; Grandpierre, G.; Paris, Jeannie

doi:10.1016/0022-0248(83)90243-9

Cited by 34 publications

(3 citation statements)

References 9 publications

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“…5 Moreover, Zn was observed to be present in the undoped materials. 14, 15 The acceptors of DA pairs are, thus, associated with substitutional Zn at the In site, denoted as Zn In . On the other hand, no change of the phonon energy was observed for Zn, Cd, and Hg acceptors.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique

Kang

Matsumoto

Fukuda

1997

Journal of Applied Physics

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Germanium-rich SiGe bulk single crystals grown by the vertical Bridgman method and by zone meltingThe 4.2 K photoluminescence ͑PL͒ spectra of undoped bulk ͗100͘ InP grown by the liquid-encapsulated vertical Bridgman ͑LE-VB͒ techniques are characterized by three kinds of recombination peaks. A peak exhibited near band-gap energy is attributed to the recombination of bound excitons ͑BEs͒. At the low energy side of BEs, a series of peaks with the same energy interval are due to the recombination of donor-acceptor ͑DA͒ pairs with their longitudinal-optical ͑LO͒ phonon replicas, which is associated with the Zn acceptor. Recombination of deep levels ͑DLs͒ is characterized by a broadband with fine structure at the higher energy side, which seems to be associated with the recombination of native defects and their phonon replicas. The lattice relaxation of DA recombination is smaller while the recombination intensity of DLs is stronger as compared the 4.2 K PL spectra of the LE-VB crystals with those of seed crystals grown by the liquid-encapsulated Czochralski ͑LEC͒ technique. At room temperature, only a broadened peak near band-gap energy is recognized in both the LEC seed and as-grown LE-VB crystals, which is assigned as the recombination of band to bands. The PL mapping results show that the recombination intensity of band to bands in the LE-VB crystal is stronger than that in the LEC crystal. By combining the etched pit density analysis, the stronger PL intensity of band to band recombination in the LE-VB crystal is considered to be due to the lower densities not only of native defects responsible for the recombination of DLs but also of dislocations responsible for the etched pit.

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Section: Resultsmentioning

confidence: 99%

Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique

Kang

Matsumoto

Fukuda

1997

Journal of Applied Physics

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“…Taking into account the fact that the enthalpy of formation of the rare earth phosphorus (RE)P is much higher than that of RE(InP), the RE and indium are beforehand vacuum baked at 700 "C in a silica crucible to obtain In-RE alloy. Then InP(RE) crystal is grown by the high pressure gradient freeze method [6]. It is thought that this process prevents the formation of RE(P) if the RE concentration in as-grown InP is lower than its solubility limit.…”

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confidence: 99%

Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors

Lambert¹,

Corre²,

Toudic³

et al. 1990

J. Phys.: Condens. Matter

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Rare earths (REs) diluted into MBE grown and synthesised n-type InP samples create an acceptor-like level (at 30 meV for Yb and 60 meV for Er) below the conduction band; the activation energies are deduced from temperature dependent Hall effect measurements. From EPR experiments where the authors observe resonance due to the Yb3+ ground state in n-type samples, they deduce that this acceptor-like level is not the Yb2+/Yb3+ acceptor level. They propose that the RE creates an attractive potential for electrons in III-V semiconductors. They discuss the consequences of this property for the luminescence excitation mechanism of the luminescence.

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“…There are reports in the literature that a) a minimum (unspecified) temperature gradient is necessary for the twin free growth of InP (7 ) , b) reduction of the viscosity of B 2 0 3 by the addition of viscosity lowering agents, and as Ge O, BiO 3 , NaAlF, etc. improve single crystal yield and c) a minimum moisture content in B 2 0 3 approximately 500ppm is necessary for elimination of twin formation (9 ) . The latter of course adversely effects the properties of the crystal since it has been shown that "grappe" formation is strongly dependent on the moisture content of the encapsulant (10 12.…”

Section: °'4°i°"mentioning

confidence: 99%

Investigtion of Liquid Encapsulation Chochralski Growth of InP.

Antypas¹

1984

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Synthesis, crystal growth and characterization of InP

Cited by 34 publications

References 9 publications

Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique

Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique

Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors

Investigtion of Liquid Encapsulation Chochralski Growth of InP.

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