Synthesis, crystal structure, thermal analysis and dielectric properties of [(C4H9)4N]3Bi2Cl9 compound

Trigui, W.; Oueslati, A.; Chaabane, I.; Hlel, F.

doi:10.1016/j.jssc.2015.01.034

Cited by 32 publications

(17 citation statements)

References 44 publications

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“…The lattice parameters of the selected unit cell were refined using the Celref 2 computer program. As a matter of fact, these parameters (a = 11.32(2) Å, b = 22.30(3) Å, c = 28.53(2) Å, and β = 96.52(0)°) are in good agreement with the previously reported value …”

Section: Resultssupporting

confidence: 91%

“…The organic–inorganic [(C 4 H 9 ) 4 N] 3 Bi 2 Cl 9 crystals were grown by slow evaporation, at room temperature. Details of the growth procedure and single crystal X‐ray diffraction study were described elsewhere …”

Section: Methodsmentioning

confidence: 99%

“…Recently, structural and thermal studies were carried out by us on tri‐tetrabutylammonium nonachlorobibismuthate(III) that crystallized, at room temperature, in monoclinic system with P2 1 /n space group . The examination of the structure has shown that each [Bi 2 Cl 9 ] 3− anion is surrounded by six [(C 4 H 9 ) 4 N] + cations, forming an octahedral configuration (Fig.…”

Section: Introductionmentioning

confidence: 99%

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Raman scattering and alternative current conduction mechanism of the high‐temperature phase transition in [(C₄H₉)₄N]₃Bi₂Cl₉

Trigui

Oueslati

Hlel

et al. 2016

J Raman Spectroscopy

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The tri‐tetrabutylammonium nonachlorobibismuthate(III) was found to crystallize in the monoclinic P21/n space group. Two reversible order–disorder phase transitions are observed at 434/430 K and 477/473 K by differential scanning calorimetry technique. The evolution of Raman wavenumber versus temperature shows a remarkable shifting of the bands associated to alkyl chains, suggesting that the phase transition is governed by the reorientational motion of the organic part [(C4H9)4N]+. The analysis of Nyquist plots has revealed the contribution of two electrical active regions corresponding to the bulk mechanism and the distribution of grain boundaries. The AC conductivity is analyzed by different processes: the non‐overlapping small polaron tunneling model proposed as a closely good model for region I and the correlated barrier hopping attributed to the conduction mechanism for region II. Copyright © 2016 John Wiley & Sons, Ltd.

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Section: Resultssupporting

confidence: 91%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Raman scattering and alternative current conduction mechanism of the high‐temperature phase transition in [(C₄H₉)₄N]₃Bi₂Cl₉

Trigui

Oueslati

Hlel

et al. 2016

J Raman Spectroscopy

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“…Nevertheless, the complexity of the phase transitions increases with the increasing number of the carbon atoms in the alkylammonium chain. For instance, the [(C 4 H 9 ) 4 N] 3 Bi 2 Cl 9 compound has four reversible phase transitions at 214, 238, 434 and 477 K …”

Section: Introductionsupporting

confidence: 75%

Crystal structure, Hirshfeld surface analysis, Thermal study and Conduction mechanism of [(C₄H₉)₄P]₃Bi₂Cl₉ compound

Elgahami

Trigui

Oueslati

et al. 2019

Applied Organom Chemis

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A novel tris (tetrabutylphosphonium) nonachlorodibismuthate (III) compound has been synthesized and characterized by a single‐crystal X‐ray diffraction, calorimetric, IR spectroscopy and electrical measurements. X‐ray diffraction analysis at room temperature reveals that the title compound belongs to the monoclinic system with P21/c space group. The unit cell dimensions are: a = 19.201(6) Å, b = 16.743 (5) Å, c = 22.396 (8) Å, β = 98.96 (2)° and Z = 4. The crystal structure was solved down to R equal to 0.035 for 5597 independent reflections. The crystal package is provided by electrostatic interactions and hydrogen bonds (C‐H….Cl). Intermolecular interactions present in the grown single crystal were analyzed by Hirshfeld surface and 2‐dimensional fingerprint plot. The differential scanning calorimetry reveals one order–disorder phase transition at 400 ± 5 K.The electrical conductivity were carried out in the frequency range 200 Hz–1 MHz at various temperatures 343–413 K using impedance spectroscopy technique. The obtained results were analyzed by fitting the experimental data to an equivalent circuit model. The temperature dependence of alternating and direct current conductivities confirms the observed phase transition in the calorimetric study; they were described in terms of Arrhenius relation. AC conductivity measurements reveal that the conduction depends on both frequency and temperature, this agrees well with Correlated Barrier Hopping model in phase I and II.

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“…In DTA curve, we can clearly see the existence of two thermal anomalies around T = 330 K and T = 420 K. The first anomaly located at T 1 = 330 K, may be due to a phase transition and the second peak at T 2 = 420 K is related to the decomposition of the material. [22][23][24].…”

Section: Thermogravimetric and Differential Thermal Analysismentioning

confidence: 99%

Synthesis, crystal structure, thermal analysis and dielectric properties of (C 8 H 12 N) 3 SnCl 6 .Cl compound

et al. 2016

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Synthesis, crystal structure, thermal analysis and dielectric properties of [(C4H9)4N]3Bi2Cl9 compound

Cited by 32 publications

References 44 publications

Raman scattering and alternative current conduction mechanism of the high‐temperature phase transition in [(C₄H₉)₄N]₃Bi₂Cl₉

Raman scattering and alternative current conduction mechanism of the high‐temperature phase transition in [(C₄H₉)₄N]₃Bi₂Cl₉

Crystal structure, Hirshfeld surface analysis, Thermal study and Conduction mechanism of [(C₄H₉)₄P]₃Bi₂Cl₉ compound

Synthesis, crystal structure, thermal analysis and dielectric properties of (C 8 H 12 N) 3 SnCl 6 .Cl compound

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Synthesis, crystal structure, thermal analysis and dielectric properties of [(C4H9)4N]3Bi2Cl9 compound

Cited by 32 publications

References 44 publications

Raman scattering and alternative current conduction mechanism of the high‐temperature phase transition in [(C4H9)4N]3Bi2Cl9

Raman scattering and alternative current conduction mechanism of the high‐temperature phase transition in [(C4H9)4N]3Bi2Cl9

Crystal structure, Hirshfeld surface analysis, Thermal study and Conduction mechanism of [(C4H9)4P]3Bi2Cl9 compound

Synthesis, crystal structure, thermal analysis and dielectric properties of (C 8 H 12 N) 3 SnCl 6 .Cl compound

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Raman scattering and alternative current conduction mechanism of the high‐temperature phase transition in [(C₄H₉)₄N]₃Bi₂Cl₉

Raman scattering and alternative current conduction mechanism of the high‐temperature phase transition in [(C₄H₉)₄N]₃Bi₂Cl₉

Crystal structure, Hirshfeld surface analysis, Thermal study and Conduction mechanism of [(C₄H₉)₄P]₃Bi₂Cl₉ compound