Synthesis, dielectric properties and application in a thin film transistor device of amorphous aluminum oxide Al_xO_y using a molecular based precursor route

Abstract

Generation of dielectric amorphous aluminum oxide using a novel chimie douce molecular precursor route is reported.

Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

“…For the fabrication of the TFT device an indium zinc oxide (IZO) semiconductor was introduced by employing established oximato precursor compounds, previously reported by our group. 22,[34][35][36] Solutions of the respective indium and zinc precursors were prepared by dissolving 1 wt% in 2-methoxyethanol (ratio In : Zn, 6 : 4), spin-coated at 2500 rpm for 20 seconds onto the Y x O y -(1)-350 dielectric and subsequently annealed at 350 C. Performing of three iterations of the coating procedure results in a lm thickness of $12 nm.…”

“…For 1 absorption bands at about 3000 cm À1 are additionally expected for low annealing temperatures like 200 or 250 C, which are attributed to n-CH 2 and n-CH 3 stretching modes originating from the ethyl framework of the 2-nitro-diethyl malonate ligand. 22 Unfortunately, the Y-O-vibrations of yttrium oxide are located in the same range, resulting in overlaps of the vibrational bands. At an annealing temperature of 500 C for precursor 1 and 600 C in the case of precursor 2, the hydroxide is fully converted into yttrium oxide, showing no remaining signals of any organic constituents.…”

“…The IZO precursor solution was generated by using single source zinc and indium precursors as described by us. 22,[34][35][36] A schematic representation of the TFT architecture is shown in Fig. S18 ESI.…”

“…4 Recently, amorphous aluminium oxide thin lms with very good dielectric properties are also accessible by a molecular single-source precursor approach reported by our group. 22 We have devised a route to Al x O y dielectric, its synthesis and structural elucidation by employing the molecular coordination compound tris[(diethyl-2-nitromalonato)] aluminium(III) (Al-DEM-NO 2 ).…”

Ultra-thin anodized aluminium dielectric films: the effect of citric acid concentration and low-voltage electronic applications

“…However, the material properties including composition and surface morphology of these ultra-thin oxide films have not been sufficiently studied yet. Among the metals that can be anodized, Al has proved to be the most popular because it is cheap and readily available on a wide range of substrates (13,14). It has been shown that when processed in neutral electrolyte solutions (e.g.…”