2023
DOI: 10.1016/j.cartre.2023.100302
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Synthesis, magnetoresistance, and thermoelectrical properties of environmentally stable n-type nitrogen-doped multiwalled carbon nanotubes

Jana Andzane,
Mikhail V. Katkov,
Krisjanis Buks
et al.
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Cited by 4 publications
(8 citation statements)
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“…MWCNTs were synthesized in a chemical vapor deposition (CVD) reactor with a spray-assisted method under 20 mm·s –1 flow of argon at atmospheric pressure within a hermetically sealed quartz tube and heated to 850 °C as described elsewhere …”
Section: Methodsmentioning
confidence: 99%
“…MWCNTs were synthesized in a chemical vapor deposition (CVD) reactor with a spray-assisted method under 20 mm·s –1 flow of argon at atmospheric pressure within a hermetically sealed quartz tube and heated to 850 °C as described elsewhere …”
Section: Methodsmentioning
confidence: 99%
“…The R(T) curve of the p-type Bi 2 Se 3 -MWCNT network showed an incremental increase in the resistance with the decrease in temperature from 300 K down to ~30 K, followed by the rapid increase in the resistance at temperatures below 30 K (Figure 3e). At temperatures between 3 and 150 K, the R(T) curve fit Mott's 3D VRH model (Figure 3e, inset), which indicated the domination of the hopping mechanism of conduction similarly to disordered CNT networks [35,[52][53][54]. The resistance values shown by the p-type Bi 2 Se 3 -MWCNT network were slightly lower in comparison with that of bare MWCNT networks, which could be related to the increase in localization length of the charge carriers due to the reduced potential barriers at MWCNT/Bi 2 Se 3 interfaces similarly to the case of the Sb 2 Te 3 -MWCNT heterostructured network.…”
Section: Resultsmentioning
confidence: 82%
“…The R(T) curve for the bare MWCNT network showed semiconductor behavior, where a monotonous incremental increase in the resistance with the decrease in the temperature from 300 K to ~30 K was followed by a rapid increase in resistance at temperatures below 30 K (Figure 3a). samples were studied in the temperature region of 2-300 K. R(T) dependencies of bare MWCNT networks (Figure 3a) and reference nanostructured Sb2Te3 and Bi2Se3 thin films (Figure 3b,c) were shown to be typical for these materials' behavior [35,[43][44][45]. The R(T) curve for the bare MWCNT network showed semiconductor behavior, where a monotonous incremental increase in the resistance with the decrease in the temperature from 300 K to ~30 K was followed by a rapid increase in resistance at temperatures below 30 K (Figure 3a).…”
Section: Resultsmentioning
confidence: 99%
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“…MWCNTs were synthesized using the spray-assisted chemical vapour deposition method from a gas phase as described elsewhere. 24 The synthesis occurred in an inert (argon) atmosphere under atmospheric pressure at a flow rate of 20 mm s −1 . 2 wt% ferrocene dissolved in toluene was used for one synthesis cycle.…”
Section: Methodsmentioning
confidence: 99%