2012
DOI: 10.3390/ijms13045278
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Synthesis Mechanism of Low-Voltage Praseodymium Oxide Doped Zinc Oxide Varistor Ceramics Prepared Through Modified Citrate Gel Coating

Abstract: High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr6O11) based ZnO varistor ceramics having breakdown voltages of 2.8 … Show more

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Cited by 37 publications
(29 citation statements)
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“…In this study, the effects of Er 2 O 3 mol%, sintering process (soaking temperature and time) on microstructure and electrical characteristics of (CaMnO 3 [7,10]. Thus, by the XRD (Fig.…”
Section: Introductionmentioning
confidence: 91%
See 1 more Smart Citation
“…In this study, the effects of Er 2 O 3 mol%, sintering process (soaking temperature and time) on microstructure and electrical characteristics of (CaMnO 3 [7,10]. Thus, by the XRD (Fig.…”
Section: Introductionmentioning
confidence: 91%
“…However, with concern to produced low voltage varistor, Pr 6 O 11 start to study as alternative additive to produced low voltage varistor. Used of Pr 6 O 11 as answer to high volatility and reactivity in Bi 2 O 3 [5,[7][8]. Extensive study by [9] with introduced CaMnO 3 shows capability of perovskite structure onto low voltage application.…”
Section: Introductionmentioning
confidence: 99%
“…with large nonlinearity coefficients [47] and surpasses the results as reported by using ZnO-Bi 2 O 3 based and ZnO-Pr 6 O 11 based varistor [53,54]. The low-voltage nonlinearity originates as a result of higher concentration of manganese present at the grain boundary layer regions, being charge compensated by zinc vacancies [47].…”
Section: Additive Of Calcium Manganite (Camno 3 ) On the Zno Based Vamentioning
confidence: 98%
“…Apparently, this structure has no advantage, since each of the two varistors has "lost" one of the faces, used as heat dissipation surfaces. Instead, the assembly behaves like a dual-mass varistor, but traversed by an approximately two-fold lower current [17] (when an impulse is applied). If the two I(U) characteristics are different (in the present case very little different) the currents that will pass through the varistors will be different, the varistor with the lower UN threshold voltage will withstand the higher current (and hence a higher heating).…”
Section: Parallel Connection Of Varistorsmentioning
confidence: 99%
“…Apparently, this structure has no advantage, since each of the two varistors has "lost" one of the faces, used as heat dissipation surfaces. Instead, the assembly behaves like a dual-mass varistor, but traversed by an approximately two-fold lower current [17] (when an impulse is applied).…”
Section: Experimental Equipment For Permanent Regime Testsmentioning
confidence: 99%