2016
DOI: 10.1016/j.surfcoat.2016.07.099
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Synthesis of a-C coatings by HPPMS using Ar, Ne and He as process gases

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Cited by 23 publications
(15 citation statements)
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“…The substrates were biased during the deposition using RF biasing, with a DC self-bias of −100 V during C deposition, and at −50 V for Ti deposition. The biasing voltage at −100 V was chosen based on previous studies that showed an optimum around this values in terms of film density and hardness [9,22,28,31]. All samples were obtained at a total pressure of 2 Pa, maintained by an automatic valve that regulates the pumping section.…”
Section: Methodsmentioning
confidence: 99%
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“…The substrates were biased during the deposition using RF biasing, with a DC self-bias of −100 V during C deposition, and at −50 V for Ti deposition. The biasing voltage at −100 V was chosen based on previous studies that showed an optimum around this values in terms of film density and hardness [9,22,28,31]. All samples were obtained at a total pressure of 2 Pa, maintained by an automatic valve that regulates the pumping section.…”
Section: Methodsmentioning
confidence: 99%
“…Sputtering of C under high peak currents as in the case of HiPIMS is a particularly challenging task, one of the main difficulties laying in the fact that micro-arcing can occur on the sputtered surface [28]. The proximity to an arc discharge can potentially provide advantages such as higher ionization degree, denser and harder coatings [33], but can also bring some of the disadvantages, like the micro-droplets formation on the growing film [22,28]. Therefore, in this work we focused on finding a stable process with discharge currents sufficiently high to achieve significant ionization of C while keeping the number of arcing events low.…”
Section: Process Descriptionmentioning
confidence: 99%
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