Synthesis of a GaN nanolayer on (001) GaAs by N ion implantation

Coelho-Júnior, H.; Santos, José Luiz dos; Maltez, R.L.

doi:10.1016/j.tsf.2017.09.021

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“…In addition, the technological integration of those nitrides combined with semiconductor materials already used in industry is promising for manufacturing systems with multiple functionalities. Gallium nitride (GaN) synthesized by N implantation into gallium arsenide (GaAs), for example, is important for microelectronics applications 5 – 7 .…”

Section: Introductionmentioning

confidence: 99%

Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon

Coelho-Júnior

Silva

Labre

et al. 2021

Sci Rep

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This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.

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Section: Introductionmentioning

confidence: 99%