Synthesis of a super broadband model for on-chip spiral inductors

Horng, Tzyy‐Sheng; Jau, Je-Kuan; Huang, Ching Jer; Han, F.Y.

doi:10.1109/rfic.2004.1320651

Cited by 12 publications

(6 citation statements)

References 8 publications

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“…T‐model is attractive for its broadband accuracy. This approach was first proposed by Horng et al in [18] and was extensively improved by Guo and Tan [19]. The physical reasoning that underlies the model is that the distributed spiral inductor can be viewed as a transmission line which can be modeled by a T‐topology lumped element network [21].…”

Section: Analysis Of Spiral Inductors Modelsmentioning

confidence: 99%

“…[20] has presented a unified scalable model for millimeter‐wave inductors and transmission lines for CMOS designs. The parameter extraction technique proposed in [18] needs the frequency locations that correspond to zeros and poles of two measured Y ‐parameter functions. However, it is found that according to measured data, most of the inductors cannot present these zeros and poles even with frequency goes up to 40 GHz.…”

Section: Analysis Of Spiral Inductors Modelsmentioning

confidence: 99%

“…The demand for accurate and convenient inductor models has significantly increased. To facilitate the circuit simulation and optimization, considerable research work on the modeling of spiral inductors on silicon substrates has been reported in recent years [4–19]. These approaches are generally categorized into numerical techniques [4], parameter fitting [7–12], and physical models [5, 6].…”

Section: Introductionmentioning

confidence: 99%

“…The parameters of compact circuit models are mainly extracted from measured two‐port S ‐parameters. From the point of view of model equivalent circuit topology, there are mainly three types of circuit models, 1‐π models [2, 6–12], 2‐π models [13–17], and T‐models [18, 19]. Ref.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of modeling approaches for on-chip spiral inductors

Wang

Sun

et al. 2012

Int J RF and Microwave Comp Aid Eng

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The recent modeling approaches for on-chip spiral inductors are extensively investigated and compared. The key features of the models are detailedly analyzed. By actual implementation of each model's parameter extraction procedure, the pros and cons of equivalent circuit topologies, parameter extraction techniques, and fitting capacity of models are provided, including 1-p, 2-p, and T-models. 1-p models and T-models are proved to be adequate for modeling distributed effect. 2-p models are more convenient in fitting asymmetric inductors. The transfer function of the spiral inductor is employed in the singularity analysis of the models. The proposals are verified by measured the S-parameters of 10 fabricated CMOS spiral inductors up to 40 GHz. V C 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE 00:000-000, 2012.

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Section: Analysis Of Spiral Inductors Modelsmentioning

confidence: 99%

Section: Analysis Of Spiral Inductors Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of modeling approaches for on-chip spiral inductors

Wang

Sun

et al. 2012

Int J RF and Microwave Comp Aid Eng

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“…This approach was first proposed by Horng in [12] [13] and was extensively used by Guo (e.g. in [14]).…”

Section: Single-segment Models For Distributed Spiral Inductorsmentioning

confidence: 99%

RF CMOS is more than CMOS: Modeling of RF passive components

McAndrew¹

2009

2009 IEEE Custom Integrated Circuits Conference

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This paper details recent progress in modeling some RF CMOS passive components: inductors, transformers, and resistors. Many different topologies have been proposed for networks to model spiral inductors; these are analyzed and shown to trend toward reviving the one-segment (π-or T-topology) approach. The need to account for the distributed nature of metal windings and coupling through a lossy substrate is emphasized. On-chip transformer models are discussed, and shown to need further development. Details of accurate physical modeling of polysilicon resistors, including nonlinearities and frequency dependence from both parasitics and self-heating, are provided.

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Modeling of On-chip RF Passive Components

2010

Compact Modeling

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Synthesis of a super broadband model for on-chip spiral inductors

Cited by 12 publications

References 8 publications

Analysis of modeling approaches for on-chip spiral inductors

Analysis of modeling approaches for on-chip spiral inductors

RF CMOS is more than CMOS: Modeling of RF passive components

Modeling of On-chip RF Passive Components

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