Synthesis of Al₂O₃ coatings on Ti(C, N)‐based cermets by microwave plasma CVD using Al(acac)₃

Abstract

Aluminum acetylacetonate (Al(acac) 3 ) was used as a precursor to synthesize aluminum oxide (Al 2 O 3 ) coatings on Ti(C, N)-based ceramic by microwave plasma CVD (MPCVD). Al 2 O 3 coatings transformed from γ phase to δ phase and α phase and as microwave power (p M ) and total pressure (P tot ) increased. The effects of p M and P tot on the microstructure of the Al 2 O 3 coating and oxidation of the substrate have been investigated. The relationship between phase structure and adhesive strength of the coatings was also studied. Coatings deposited at p M = 1.0-1.2 kW and P tot = 400 Pa exhibited good adhesion strength (Class 1). K E Y W O R D S adhesion, Al 2 O 3 coating, microstructure, microwave plasma CVD, Ti(C, N) cermets

Gas-phase aluminium acetylacetonate decomposition: revision of the current mechanism by VUV synchrotron radiation

“…In particular, Al2O3 can act as a passivating layer, as an alternative gate dielectric oxide, 1,2 anti-corrosion and permeation barrier coating, [3][4][5][6] as well as surface enhancement coating in the cutting tool industry. 7,8 Thanks to high growth rates and comprehensive surface coverage, Al2O3 layers are frequently synthesized by metal-organic chemical vapour deposition (MOCVD), a widely used technique for the preparation of functional coatings. 9 In MOCVD processes, a volatile, metalcontaining precursor is used for the deposition of thin films.…”