Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity

Abstract

Although various synthesis and characterization strategies have been employed for the synthesis of crystalline nanowires, there is very little work done on development of low-dimensional amorphous semiconductors. This paper presents a simple strategy to grow amorphous InSb (a-InSb) nanowires (NWs) in a chemical vapor deposition (CVD) system. The NWs were grown on Si substrate coated with indium film and the lack of crystallinity in the as-grown stoichiometric NWs was ascertained by Raman spectroscopy and electron transport measurements. A model proposed to explain the amorphous NW growth mechanism takes into account the fact that NW growth was carried out at the high temperature ramp-up rate of 75 ∘C/min. This high rate is believed to affect the growth kinematics and determine the arrangement of atoms in the growing NW. Raman spectrum of the as-grown sample shows a broad peak around 155 cm−1, indicative of the presence of high density of homopolar Sb-Sb bonds in the amorphous matrix. It was also found that high intensity laser light induces localized crystallization of the NW, most likely due to radiation-stimulated diffusion of defects in a-InSb. The nonlinear trend of the current-voltage characteristics for individually contacted a-InSb NWs was analyzed to prove that the non-linearity is not induced by Schottky contacts. At high bias fields, space charge limited conduction was the proposed electron transport mechanism. Post-growth annealing of the as-grown a-InSb NWs was found to be very effective in causing the NWs to undergo a phase transition from amorphous to crystalline.

Impact of Thermal Oxidation on Morphological, Structural and Magnetic Properties of Fe-Ni Wire-Like Nanochains

“…Their origin is associated with the presence of Ni 3 B phase which is frequently formed during the synthesis of nickel compounds in the reduction reaction with a reducing agent containing BH 4 À ions. [41][42][43] Also, it has been already proven that the Ni 3 B is more resistant against oxidation than a pure metallic material. [42] Therefore, it might be that the presence of Ni 3 B phase in the Fe 0.25 Ni 0.75 sample treated at 400°C hinders its thermal oxidation.…”

“…This observation, indeed, is in a good agreement with the previously reported crystallization of the Ni 3 B nanoparticles in which the thermal annealing at about 450°C has resulted in the formation of boron-containing nickel nanoparticles. [41][42][43] In order to clarify the different resistance against oxidation of the as-prepared Fe-Ni chains, the thermogravimetric analysis (TGA) measurements have been performed in dry air purged with 30 mL min À1 of argon and the obtained results are shown in Figure 5. The solid lines in this figure represent the data collected up to 500°C, whereas the dashed lines above 500°C.…”

Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

“…They have been attributed to defects and also to the amorphous/polycrystalline nature of the nanowires [39,40,41]. The peak at 149 cm−1 has been attributed to a high density of Sb-Sb bonds, typically found in a-InSb [42].…”

A Review CHEMICAL VAPOR DEPOSITION : PROCESS AND APPLICATION

“…Ini hasil dari kemudahan relatif yang kotoran dibuang dari prekursor gas menggunakan teknik distilasi. Keunggulan lainnya termasuk tingkat deposisi yang relatif tinggi, dan fakta bahwa CVD sering kali tidak membutuhkan setinggi vakum sebagai proses PVD (83)(84)(85).…”