Synthesis of boron carbonitride (BCN) films by plasma-enhanced chemical vapor deposition using trimethylamine borane as a molecular precursor

Kida, Tetsuya; Shigezumi, Kazunari; Mannan, Md. Abdul; Akiyama, Morito; Baba, Yuji; Nagano, Masamitsu

doi:10.1016/j.vacuum.2009.02.011

Cited by 18 publications

(18 citation statements)

References 18 publications

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“…The absorption bands near 1580 and 1250 cm À1 are ascribed to C]N and CeN bonds, respectively. The weak C]N bond in CNFs originates from the transformation of C^N bond during heat treatment [26,33]. As can be seen, the peak intensity of C]N around 1580 cm À1 for BNC f -NA is stronger and sharper than those of BNC f -N and CNFs, demonstrating the effective incorporation of N element by activation in NH 3 .…”

Section: Resultsmentioning

confidence: 90%

B, N-codoped 3D micro-/mesoporous carbon nanofibers web as efficient metal-free catalysts for oxygen reduction

Qiu

Lei

Wang

et al. 2015

Current Applied Physics

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Section: Resultsmentioning

confidence: 90%

B, N-codoped 3D micro-/mesoporous carbon nanofibers web as efficient metal-free catalysts for oxygen reduction

Qiu

Lei

Wang

et al. 2015

Current Applied Physics

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“…This points to a reduction of oxygen in the CVD chamber, which has been reported to be a problem for BN and B-C-N plasma deposition. 14,33 The total pressure in the deposition chamber was found to depend on the plasma power, the N/Ar ratio and the total gas flow. We determined the following dependence:…”

Section: Please Do Not Adjust Marginsmentioning

confidence: 99%

“…1 A chemical vapor deposition (CVD) process where a plasma discharge is used to activate the deposition chemistry at low thermal energy 3 is therefore favorable for BEOL processing. Several studies on plasma CVD of B-C-N films in the literature have been conducted with precursors containing B-N bonds such as: dimethylamineboron (DMAB, (H3C)HN:BH3)) 4 pyridine-borane (PB, C5H5NBH3) 5 , triazaborabicyclodecane (TBBD, BN(NHC3H2)2 ) 5 , 1,3,5trimethylborazine (N-TMBA, (CH3)3N3B3H3) 6-9 , 1,3,5triethylborazine (N-TEBA, B3H3(NCH2CH3)3) 10,11 , tris-(dimethylamino)boron (TDMAB, B(N(CH3)2)3) 12 , triethylamineboron 7 and trimethylamineboron 13,14 . The incorporation of nitrogen in the films has been found to be important to increase the bandgap in B-C-N materials, making them more insulating.…”

Section: Introductionmentioning

confidence: 99%

“…15 The highest nitrogen content achieved without additional nitrogen source in the plasma CVD process are 28 at.% using N-TMBA 6 , 43 at.% using N-TEBA 10 , 38 at.% using TDMAB 12 , 20 at.% using triethylamineboron 7 and, 12 at.% using trimethylamineboron 13 . Studies on the deposition chemistry suggest that the B-N bonds in the precursor molecules are not the major source of nitrogen in the film, 13,14 and ammonia (NH3) or dinitrogen (N2) are typically added to the plasma to increase the N content in the films. A precursor containing B-N bonds might therefore not be the way forward in plasma CVD of B-C-N films.…”

Section: Introductionmentioning

confidence: 99%

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Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Souqui¹,

Pališaitis²,

Högberg³

et al. 2020

Preprint

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<div> Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C2H5)3) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm3 as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements, varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition. </div>

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“…Several studies on plasma CVD of B-C-N films in the literature have been conducted with precursors containing B-N bonds such as: dimethylamineboron (DMAB, (H 3 C)HN:BH 3 ) 4 pyridine-borane (PB, C 5 H 5 NBH 3 ), 5 triazaborabicyclodecane (TBBD, BN(NHC 3 H 2 ) 2 ), 5 1,3,5-trimethylborazine (N-TMBA, (CH 3 ) 3 N 3 B 3 H 3 ), 6-9 1,3,5-triethylborazine (N-TEBA, B 3 H 3 (NCH 2 CH 3 ) 3 ), 10,11 tris-(dimethylamino)boron (TDMAB, B(N(CH 3 ) 2 ) 3 ), 12 triethylamineboron 7 and trimethylamineboron. 13,14 The incorporation of nitrogen in the films has been found to be important to increase the bandgap in B-C-N materials, making them more insulating. 15 The highest nitrogen content achieved without additional nitrogen source in the plasma CVD process are 28 at% using N-TMBA, 6 43 at% using N-TEBA, 10 38 at% using TDMAB, 12 20 at% using triethylamineboron 7 and, 12 at% using trimethylamineboron.…”

Section: Introductionmentioning

confidence: 99%