Synthesis of CdO Nanoflowers by Sol‐Gel Method on Different Substrates with Photodetection Application

Rajput, Jeevitesh K.; Pathak, Trilok K.; Swart, H.C.; Purohit, L.P.

doi:10.1002/pssa.201900093

Cited by 7 publications

(4 citation statements)

References 32 publications

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“…Metal oxides are very common and easily available on Earth, and they are used to fabricate transparent devices due to their low absorption in the visible region. The typical wide bandgap metal oxides such as SnO 2 , ZnO, TiO 2 and In 2 O 3 can perform as ultraviolet light sensors [5]. The visible range-absorbing CdO is commonly used to fabricate solar cell devices, and it also might be a potential candidate to detect the light spectrum [5].…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices

Anitha¹,

Kumar

Mele

et al. 2021

Coatings

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We developed silver-doped Cd1–xAgxO thin films (where x = 0, 0.01, 0.02, 0.03 and 0.04) on amorphous glass substrate by an automated nebulizer spray pyrolysis set-up. The XRD patterns show rock salt cubic crystal structures, and the crystallite sizes vary with respect to Ag doping concentrations. SEM images exhibited a uniform distribution of grains with the addition of Ag; this feature could support the enhancement of electron mobility. The transmittance spectra reveal that all films show high transmittance in the visible region with the observed bandgap of about 2.40 eV. The room temperature photoluminescence (PL) studies show the increase of near-band-edge (NBE) emission of the films prepared by different Ag doping levels, resulting in respective decreases in the bandgaps. The photodiode performance was analyzed for the fabricated p-Si/n-Cd1–xAgxO devices. The responsivity, external quantum efficiency and detectivity of the prepared p-Si/n-Cd1–xAgxO device were investigated. The repeatability of the optimum (3 at.% Ag) photodiode was also studied. The present investigation suggests that Cd1–xAgxO thin films are the potential candidates for various industrial and photodetector applications.

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Section: Introductionmentioning

confidence: 99%

“…The typical wide bandgap metal oxides such as SnO 2 , ZnO, TiO 2 and In 2 O 3 can perform as ultraviolet light sensors [5]. The visible range-absorbing CdO is commonly used to fabricate solar cell devices, and it also might be a potential candidate to detect the light spectrum [5].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices

Anitha¹,

Kumar

Mele

et al. 2021

Coatings

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“…concentration by agglomerating the defects and sometimes it can nearly anneal out the defects. Though from the work of Rajput et al (28) we come to know that CdO nanoflakes have good conductivity, it is mentionable that concentration and size of defects play important role in majority carrier conduction inside semiconductors for which S and W parameter study is helpful.…”

Section: Coincidence Doppler Broadening Analysismentioning

confidence: 99%

Removal of defects in CdO nanoparticle and rapid synthesis of CdO nanoflake using novel microwave technique to improve semiconductor device performance

Das¹

2021

IJST

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Objective: The objective of this study is to synthesize CdO nanoparticle and nanoflakes both in a single way. Also the purpose of removing defects from semiconductor nanoparticles has been considered. Methods: Very small sized Cadmium oxide nanoparticles (11 -29 nm) and nanoflakes of average size 70 nm were prepared by sol-gel process. Two solutions of 0.2M CdCl 2 and 0.2M NaOH were used with a mixture of 1:2 ethylene glycol and methanol. Two different heating method of dried precipitate was adopted to observe the morphology and defect characteristics. Half of the precipitate was annealed in furnace and rest half in domestic microwave. Findings: The fcc (NaCl-type) structure has been found in the nanostructures with lattice constant varying with annealing temperature. We propose a linear relation for the change in lattice constant. HRTEM pictures show nanoflakes and hexagonal nanoparticles. The ratio curve of coincidence Doppler broadening spectroscopy (CDBS) found defect concentration reduction and agglomeration effect on microwave irradiation in place of furnace annealing. It indicated reduction of defects inside the nanoparticles. The S and W parameter revealed the chemical surroundings and momentum distribution of the vacancy clusters varying with crystallite size. Novelty: Furnace annealing and microwave irradiation showed different effect of surface strain on lattice. Microwave irradiation has been used to reduce defects inside CdO nanocrystals for potential application and coincidence Doppler broadening spectroscopy showed potential to be a very effective tool of defect characterization and electron momentum comparison. Also, this work presents how microwave radiation can be used to prepare nanoflakes and nanoparticles from same reactants without any substrate.

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“…In addition, due to their multifunctionalities as piezoelectric and ferroelectric devices, CdO films are also reported to be suitable for construction of opto-electromechanical nano-devices [2]. Moreover, CdO thin films are mentioned as promising layers with photodetecting characteristics that exhibits good stability and recovery times [3].…”

Section: Introductionmentioning

confidence: 99%

Nonlinear optical performance of CdO/InSe Interfaces

Algarni

Qasrawi

2020

Phys. Scr.

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In this article, the growth nature, structural and optical properties of CdO/InSe interfaces are investigated. The CdO/InSe interfaces are prepared by the thermal vacuum deposition technique. Structurally, while the CdO exhibited cubic structure, the InSe layer was amorphous in nature. The morphological analyses have shown that the interface is composed of randomly distributed circular grains of average sizes of ∼170 nm. The interfacing of the CdO and InSe resulted in enhancing the light absorbability of CdO by ∼21 times in the IR range. It also showed well aligned conduction bands and valence band offset of 0.72 eV. The Drude-Lorentz modeling of the imaginary part of the dielectric spectra of the CdO/InSe interfaces has shown that the device is suitable for the fabrication of field effect transistors. The drift mobility of free carriers at the interface reached 42.27 In addition, a quality factor larger than 103 is achieved in the IR range indicating the suitability of these optical interfaces to store electromagnetic energy. These properties are important as they shows the applicability of the CdO/InSe interface in solar cells and optoelectronics as optical signal receivers or converters.

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Synthesis of CdO Nanoflowers by Sol‐Gel Method on Different Substrates with Photodetection Application

Cited by 7 publications

References 32 publications

Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices

Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices

Removal of defects in CdO nanoparticle and rapid synthesis of CdO nanoflake using novel microwave technique to improve semiconductor device performance

Nonlinear optical performance of CdO/InSe Interfaces

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