As an energetic ion
traverses a target material, it loses its energy
through the processes of electronic energy loss (
S
e
) and nuclear energy loss (
S
n
). Controlled swift heavy ion (SHI) irradiation on solid targets
produces its effects through both of these mechanisms, as a consequence
of which modifications occur in the structure, surface morphology,
and magnetic and optical properties, apart from ion implantation and
ion-induced reactivity. A systematic investigation of these effects
can be useful in developing standard protocols for creating desired
effects in materials using specific ion beams. In this study, indium
films of thickness 25 nm were deposited on silicon substrates and
were subjected to 100 MeV O
7+
and 100 MeV Si
7+
ion irradiation, with the fluences varying from 1 × 10
11
to 1 × 10
13
ions/cm
2
. The pristine
and SHI-irradiated films were then characterized using glancing incidence
X-ray diffraction (GIXRD), Rutherford backscattering spectrometry
(RBS), scanning electron microscopy (SEM), and atomic force microscopy
(AFM). The motive was to identify the effects of irradiation with
different ion species having large variations in electronic and nuclear
energy losses. While the RBS results suggest that sputtering is extremely
low and that there are no major changes in the film composition due
to ion beam-induced mixing, the GIXRD analysis indicates that increasing
the ion fluence reduces the crystallinity of the film for both the
ions. Ion beam irradiation with O
7+
ions, however, results
in beam-induced reactivity, as the GIXRD scan shows characteristic
peaks from indium oxide (In
2
O
3
), which become
the predominant peaks at the highest fluence used here. Si
7+
ion irradiation results in a narrowing of the particle size distribution
on the surface, with no evidence of reactivity. SEM results indicate
fusion and fragmentation of grains with the increase in the ion fluences,
and AFM images reveal an increase in the surface roughness of a few
percent when irradiated with both 100 MeV O
7+
and 100 MeV
Si
7+
ions.