Synthesis of Colloidal HgTe Quantum Dots for Narrow Mid-IR Emission and Detection

Keuleyan, Sean; Lhuillier, Emmanuel; Guyot‐Sionnest, Philippe

doi:10.1021/ja2079509

Cited by 277 publications

(341 citation statements)

References 19 publications

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“…Finally, other colloidal QDs with demonstrated absorption/emission at long infrared wavelengths are PbTe (1200-2200 nm) [24] and HgTe (1300-5000 nm) [25].…”

Section: -P2mentioning

confidence: 99%

Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites

Suárez¹

2016

Eur. Phys. J. Appl. Phys.

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Abstract. Semiconductor nanocrystals have arisen as outstanding materials to develop a new generation of optoelectronic devices. Their fabrication under simple and low cost colloidal chemistry methods results in cheap nanostructures able to provide a wide range of optical functionalities. Their attractive optical properties include a high absorption cross section below the band gap, a high quantum yield emission at room temperature, or the capability of tuning the band-gap with the size or the base material. In addition, their solution process nature enables an easy integration on several substrates and photonic structures. As a consequence, these nanoparticles have been extensively proposed to develop several photonic applications, such as detection of light, optical gain, generation of light or sensing. This manuscript reviews the great effort undertaken by the scientific community to construct active photonic devices based on these nanoparticles. The conditions to demonstrate stimulated emission are carefully studied by comparing the dependence of the optical properties of the nanocrystals with their size, shape and composition. In addition, this paper describes the design of different photonic architectures (waveguides and cavities) to enhance the generation of photoluminescence, and hence to reduce the threshold of optical gain. Finally, semiconductor nanocrystals are compared to organometallic halide perovskites, as this novel material has emerged as an alternative to colloidal nanoparticles.

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“…Finally, other colloidal QDs with demonstrated absorption/emission at long infrared wavelengths are PbTe (1200-2200 nm) [24] and HgTe (1300-5000 nm) [25].…”

Section: -P2mentioning

confidence: 99%

Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites

Suárez¹

2016

Eur. Phys. J. Appl. Phys.

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“…Methods for depositing the CQDs vary, and include spin-casting [6,17,18,41], dip-coating [106,107], dropcasting [108,109], spray-coating [110][111][112][113] and doctorblading [114,115]. Figure 1C shows a CQD solar cell array in which the PbS CQD film was spin-cast using a layer-bylayer deposition process to build up a thick film.…”

Section: Film Processingmentioning

confidence: 99%

Advancing colloidal quantum dot photovoltaic technology

et al. 2016

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Colloidal quantum dots (CQDs) are attractive materials for solar cells due to their low cost, ease of fabrication and spectral tunability. Progress in CQD photovoltaic technology over the past decade has resulted in power conversion efficiencies approaching 10%. In this review, we give an overview of this progress, and discuss limiting mechanisms and paths for future improvement in CQD solar cell technology. We briefly summarize nanoparticle synthesis and film processing methods and evaluate the optoelectronic properties of CQD films, including the crucial role that surface ligands play in materials performance. We give an overview of device architecture engineering in CQD solar cells. The compromise between carrier extraction and photon absorption in CQD photovoltaics is analyzed along with different strategies for overcoming this trade-off. We then focus on recent advances in absorption enhancement through innovative device design and the use of nanophotonics. Several light-trapping schemes, which have resulted in large increases in cell photocurrent, are described in detail. In particular, integrating plasmonic elements into CQD devices has emerged as a promising approach to enhance photon absorption through both near-field coupling and far-field scattering effects. We also discuss strategies for overcoming the single junction efficiency limits in CQD solar cells, including tandem architectures, multiple exciton generation and hybrid materials schemes. Finally, we offer a perspective on future directions for the field and the most promising paths for achieving higher device efficiencies.

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“…We obtain v F ∼ 400meV · nm for typical TI materials 5 , say Bi 2 Se 3 or Pb x Sn 1−x Te. To compare with existing results on the conventional InAs/GaAs self-assembled 18 and HgTe quantum dots 25 , we consider a similar dot size, e.g., R = 10 nm, where the relevant bound state energies lay within the range of [−120, 120] meV for the mass potential magnitude |M 1 | ∼ 80 meV. The applied electric field is E 0 ∼ 40λ kV/cm, i.e., ranging from −200 kV/cm to 200 kV/cm for λ ∈ [−5, 5].…”

Section: Experimental Schemes and Potential Applicationsmentioning

confidence: 99%

Reverse Stark effect, anomalous optical transitions, and control of spin in topological insulator quantum dots

Lai

2015

Phys. Rev. B

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Formed through a closed domain magnetic heterostructure on the surface of a 3D topological insulator, a quantum dot permits a class of quantized interfacial states of a topological origin. We find that these states exhibit a remarkable, reverse Stark effect in response to an applied electric field. In particular, those topological states whose energies are within the gap exhibit peculiar electrical alignments that are opposite to those associated with the conventional quantum-confined Stark effect, in that the positive (negative) energy states tend to align with (against) the direction of the field. The phenomenon has unusual implications for the associated optical transitions. Furthermore, the exotic topological states exhibit polarized spin textures that can be effectively controlled electrically or optically, opening avenue for potential applications in Dirac material based spintronics.

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Synthesis of Colloidal HgTe Quantum Dots for Narrow Mid-IR Emission and Detection

Abstract: HgTe colloidal quantum dots are prepared via a simple two-step injection method. Absorption and photodetection with sharp edges, as well as narrow photoluminescence, are tunable across the near and mid-IR between 1.3 and 5 μm.

Cited by 277 publications

References 19 publications

Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites

Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites

Advancing colloidal quantum dot photovoltaic technology

Reverse Stark effect, anomalous optical transitions, and control of spin in topological insulator quantum dots

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