Synthesis of Cr2AlC thin films by reactive magnetron sputtering

Su, Ranran; Zhang, Hongliang; Meng, Xiangpeng; Shi, Liqun; Chao-zhuo, Liu

doi:10.1016/j.fusengdes.2017.04.129

Cited by 20 publications

(8 citation statements)

References 44 publications

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“…In previous papers [11,12] it has been argued that proper identification of Cr 2 AlC must consider also the presence of the (0002) reflections (at around 13.8° in 2θ). There are however some authors claiming the existence of Cr 2 AlC phase without the occurrence of (0002) peak (hkil Bragg-Bravais notations) [8,18,20,21,29]. With that said, we have however identified unambiguously both the (0002) and (0004) peaks in the all-crystalline sample, as analyzed hereafter.…”

Section: X-ray Diffraction Patternsmentioning

confidence: 52%

“…It has also been revealed that the presence of undesirable Cr 7 C 3 phase diminishes the protection capability of the coating by promoting internal oxidation and favouring embrittling of the coating. Other recent studies of MAX phase coatings [16][17][18] have also shown that the outcome of the obtained phase composition in the MAX coatings is highly influenced by the synthesis methods. For instance, sputtering from a Cr-Al-C hot-pressed composite target [17] was reported to yield crystalline Cr 2 AlC coating; however, the synthesis implied hot pressing at 800 ℃ of the target followed by long time (20 h) annealing procedures at high temperature (620 ℃) of the coating.…”

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confidence: 97%

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Incipient low-temperature formation of MAX phase in Cr–Al–C films

Crisan

2018

J Adv Ceram

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Ceramic-metallic MAX phase of chromium aluminium carbide ternary compounds was successfully obtained through deposition by DC sputtering onto Si substrates. A study of the influence of substrate temperature and in-air post-annealing on the film crystallinity and oxidation was undertaken. Scanning electron microscopy (SEM), wavelength-dispersive X-ray analysis (WDSX), and X-ray diffraction (XRD) were used for film characterization. It is shown that, at substrate temperature of about 450 ℃, as-deposited films are amorphous with small nanocrystals. Subsequent annealing in air at 700 ℃ leads to film crystallization and partial oxidation. WDSX spectroscopy shows that the films oxidise to a depth of around 120 nm, or 5% of total film thickness which amounts at around 2.68 µm. As a novelty, this demonstrates the possibility of in-air crystallization of Cr 2 AlC films without significant oxidation. Materials Analysis Using Diffraction (MAUD) software package for a full-profile analysis of the XRD patterns (Rietveld-type) was used to determine that, as a result of annealing, the average crystallite size changes from 7 to 34 nm, while microstrain decreases from 0.79% to 0.24%. A slight tendency of preferential growth along the (10 10) direction has been observed. Such texturing of the microstructure has the potential of inducing beneficial anisotropic fracture behaviour in the coatings, potentially interesting for several industrial applications in load-bearing devices.

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Section: X-ray Diffraction Patternsmentioning

confidence: 52%

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confidence: 97%

Incipient low-temperature formation of MAX phase in Cr–Al–C films

Crisan

2018

J Adv Ceram

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“…During deposition, the substrate temperature was kept at 600℃, the substrate bias voltage was kept at 40 V and the deposition used a sputtering power of 70 W. Further description of the preparation process can be found elsewhere. 19 Irradiation of Cr 2 AlC films was performed using a LC-4 ion implanter at the Institute of Semiconductors, Chinese Academy of Sciences. The irradiation was carried out using He ions at an energy of 100 keV and fluence of 1 × 10 17 ions cm −2 .…”

Section: Methodsmentioning

confidence: 99%

“…The chamber vacuum was kept at 0.15 Pa by flowing a mixed gas of acetylene and argon as the working gas with a flux ratio of 7.5 sccm (standard‐state cubic centimeter per minute) to 0.085 sccm. During deposition, the substrate temperature was kept at 600℃, the substrate bias voltage was kept at 40 V and the deposition used a sputtering power of 70 W. Further description of the preparation process can be found elsewhere 19 …”

Section: Methodsmentioning

confidence: 99%

Annealing effects on the structure and hardness of helium‐irradiated Cr₂AlC thin films

Wang

et al. 2020

J. Am. Ceram. Soc.

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Cr 2 AlC MAX phase thin films prepared by radio-frequency magnetron sputtering were irradiated at room temperature by 100 keV helium ions to a fluence of 1 × 10 17 ions cm −2. The effects of thermal annealing on the structural and mechanical properties of the helium-irradiated Cr 2 AlC films as well as the helium release were investigated by grazing-incidence X-ray diffraction (GIXRD), Raman spectroscopy, and scanning electron microscope (SEM) in combination with nano-indentation and elastic recoil detection (ERD) analysis. The irradiation-induced structural damage in the Cr 2 AlC is significantly recovered by thermal annealing at temperatures around 600℃, attributed to high defect diffusivity. After annealing to 750℃, the hardness of irradiated films recovered almost completely, which is ascribes to both defect recombination and reformation of damaged chemical bonds. Substantial helium release occurring at this annealing temperature is closely related to the damage recovery due to helium irradiation.

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“…Layered ternary materials [1][2][3] are known to exhibit many outstanding properties, including thermal shock resistance [2,4,5], oxidation resistance [6,7], hardness, strength, and radiation resistance [8,9]. Radiation effects have been studied primarily in MAX phases (M = early transition metal, A = group A element in the periodic table, and X = C or N), which in some cases can maintain their crystalline structures up to a very high radiation dose [8,9].…”

Section: Background and Motivationmentioning

confidence: 99%

Defect behavior and radiation tolerance of MAB phases (MoAlB and Fe2AlB2) with comparison to MAX phases

Zhang

Kim

et al. 2020

Acta Materialia

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MAB phases are a new class of layered ternary materials that have already shown a number of outstanding properties. Here, we investigate defect evolution and radiation tolerance of two MAB phases, MoAlB and Fe2AlB2, using a combination of experimental characterization and firstprinciples calculations. We find that Fe2AlB2 is more tolerant to radiation-induced amorphization than MoAlB, both at 150 °C and at 300 °C. The results can be explained by the fact that the Mo Frenkel pair is unstable in MoAlB and as a result, irradiated MoAlB is expected to have a significant concentration of MoAl antisites, which are difficult to anneal even at 300 °C. We find that the tolerance to radiation-induced amorphization of MAB phases is lower than in MAX phases, but it is comparable to that of SiC. However, MAB phases do not show radiation-induced cracking which is observed in MAX phases under the same irradiation conditions. This study suggests that MAB phases might be a promising class of materials for applications that involve radiation.

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Synthesis of Cr2AlC thin films by reactive magnetron sputtering

Cited by 20 publications

References 44 publications

Incipient low-temperature formation of MAX phase in Cr–Al–C films

Incipient low-temperature formation of MAX phase in Cr–Al–C films

Annealing effects on the structure and hardness of helium‐irradiated Cr₂AlC thin films

Defect behavior and radiation tolerance of MAB phases (MoAlB and Fe2AlB2) with comparison to MAX phases

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Synthesis of Cr2AlC thin films by reactive magnetron sputtering

Cited by 20 publications

References 44 publications

Incipient low-temperature formation of MAX phase in Cr–Al–C films

Incipient low-temperature formation of MAX phase in Cr–Al–C films

Annealing effects on the structure and hardness of helium‐irradiated Cr2AlC thin films

Defect behavior and radiation tolerance of MAB phases (MoAlB and Fe2AlB2) with comparison to MAX phases

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Annealing effects on the structure and hardness of helium‐irradiated Cr₂AlC thin films