Synthesis of crystallized TaON and Ta3N5 by nitridation of Ta2O5 thin films grown by pulsed laser deposition

Kerlau, Marie; Merdrignac‐Conanec, Odile; Guilloux-Viry, M.; Перрин, А.

doi:10.1016/j.solidstatesciences.2003.10.010

Cited by 44 publications

(30 citation statements)

References 32 publications

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“…Over the past decade, thermal nitridation of metal oxide thin films such as tantalum oxide, silicon oxide, and powders such as indium oxide and gallium oxide, in the presence of ammonia, have been widely studied. 5,6 However, fundamental understanding of the process of nitrogen incorporation into metal oxides in general has not been fully explored.…”

Section: Introductionmentioning

confidence: 99%

Phase Transformation Studies of Metal Oxide Nanowires

Thangala

Chen

Chin

et al. 2009

Crystal Growth & Design

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Here, we report that the postsynthesis nitridation of tungsten oxide nanowires can result in single crystal nitride nanowires when the initial diameters of the nanowires are less than 10 nm. For nanowires with diameters greater than 10 nm, the nitridation of nanowires resulted in polycrystalline but highly oriented tungsten nitride domains in nanowires. Partially nitrided nanowires show an epitaxial relationship between the nitride nuclei and the oxide nanowire, being oriented with respect to the axial direction of the nanowires. The stress resulting from the strain due to lattice mismatch between oxide and nitride phases seems to control the critical size of the nitride nuclei within oxide nanowires. The photoluminescence data show that the resulting bandgap of the tungsten nitride nanowires was downshifted to 2.95 eV from 3.54 eV for tungsten oxide nanowires.

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Section: Introductionmentioning

confidence: 99%

Phase Transformation Studies of Metal Oxide Nanowires

Thangala

Chen

Chin

et al. 2009

Crystal Growth & Design

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“…Ionic conductivity studies focusing on the behavior of N 3− anions have yielded promising results indicating the possibility of N 3− ion conducting materials [4 -6]. Transition metal oxide nitrides are also compounds possibly suitable as dielectrics [7,8] in microelectronic devices, or as chemical gas sensors [9].…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Crystal Structure and Magnetic Properties of Bixbyite-type Vanadium Oxide Nitrides

Nakhal

Hermes

Ressler

et al. 2009

Zeitschrift Für Naturforschung B

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Ammonolysis of vanadium sulfide leads to the formation of bixbyite-type vanadium oxide nitrides. Small amounts of nitrogen incorporated in the structure result in the stabilization of the bixbyite type not known for vanadium oxides. The crystal structure was investigated using X-ray diffraction and X-ray absorption spectroscopy. At temperatures above 550 • C the powders decompose to corundumtype V 2 O 3 containing no detectable amount of nitrogen. Below 39 K magnetic ordering is observed.

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“…It should be pointed out that the easier CN x decomposition in TaU will induce inhomogeneous N species atmosphere and consequent overreactions. [4] Thus, the formation and stabilization of CN x on large SiO 2 surface is important for TaON and Ta 3 N 5 controlled synthesis because of the suppression of N source release (Figure 2 c).…”

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confidence: 99%

“…The traditional method using NH 3 is limited for the danger associated with using NH 3 at high temperature and the complexity related to the rigid control of gas composition, flow rate, and pressure. [4, 5] Moreover, although urea and cyanamide have been reported as safe nitrogen sources for preparing tantalum nitrides, only impure and deeply reduced TaN could be obtained, as an effective control on reactions is absent. [6] Recently, we discovered that the controlled release of N source from urea is significant to control metal nitridation.…”

mentioning

confidence: 99%

“…[2a, 3] The controllable synthesis of TaON and Ta 3 N 5 nanoparticles (NPs) with tailored chemical composition is therefore an attractive goal, [2e, 3a] which is, however, difficult to achieve by current strategies because of easy overreactions of nitridation. [4] For example, by-products of Ta 3 N 5 , Ta 4 N 5 , and even TaN will be easily generated from further nitridation of TaON during calcination. The traditional method using NH 3 is limited for the danger associated with using NH 3 at high temperature and the complexity related to the rigid control of gas composition, flow rate, and pressure.…”

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confidence: 99%

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SiO₂‐Surface‐Assisted Controllable Synthesis of TaON and Ta₃N₅ Nanoparticles for Alkene Epoxidation

Gao

Wang

et al. 2011

Angew Chem Int Ed

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Metal nitrides are promising materials because of their prominent properties originating from metal-nitrogen bonds and noble-metal-like electron features, such as thermal stability, mechanical hardness, superconductivity, and high catalytic performance in hydrocarbon conversion.[1] More importantly, their bulk and surface properties are significantly associated with the nitridation levels, which can be adjusted as such. Taking tantalum (oxy)nitrides as the current example, introducing N atoms into Ta 2 O 5 brings a remarkably narrowed and tunable band-gap energy, thus enabling novel visible-light photocatalysts.[2] Meanwhile, the catalytic properties of Ta in tantalum (oxy)nitrides for nonphotocatalytic reactions are also expected to be improved because of the tailored nitridation and easier electron transfer from N (vs. O) to Ta centers. However, there are still no reports on these effects to the best of our knowledge. Significantly, such modulation of material properties by controlled nitridation provides a new strategy for designing novel catalysts. [2a, 3] The controllable synthesis of TaON and Ta 3 N 5 nanoparticles (NPs) with tailored chemical composition is therefore an attractive goal, [2e, 3a] which is, however, difficult to achieve by current strategies because of easy overreactions of nitridation.[4] For example, by-products of Ta 3 N 5 , Ta 4 N 5 , and even TaN will be easily generated from further nitridation of TaON during calcination. The traditional method using NH 3 is limited for the danger associated with using NH 3 at high temperature and the complexity related to the rigid control of gas composition, flow rate, and pressure. [4, 5] Moreover, although urea and cyanamide have been reported as safe nitrogen sources for preparing tantalum nitrides, only impure and deeply reduced TaN could be obtained, as an effective control on reactions is absent. [6] Recently, we discovered that the controlled release of N source from urea is significant to control metal nitridation. [7] As a further controlled version of urea pyrolysis, we present herein a new SiO 2 -surface-assisted strategy for the controlled fabrication of TaON and Ta 3 N 5 NPs, which successfully avoids the disadvantage mentioned above. Assisted by SiO 2 , the production of TaON over Ta 3 N 5 NPs with tailored composition was achieved through calcination of Ta-urea (TaU) gels with suitable urea/Ta ratios (R U/Ta ). A mechanism is proposed that urea is converted into carbon-nitride (CN x ) species on SiO 2 -surface at mild temperature, [8] which further acts as a slow release N source for controlled nitridation. The electronic properties of Ta are tuned by the different nitridation levels in TaON and Ta 3 N 5 NPs, which significantly improves the activity for alkene epoxidation, as compared to Ta 2 O 5 NPs. This is the first time to discover that introducing N into Ta 2 O 5 can remarkably improve epoxidation activity because of the easier electron transfer from N (vs. O) to Ta. Furthermore, the controlled nitridation endows catalys...

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Synthesis of crystallized TaON and Ta3N5 by nitridation of Ta2O5 thin films grown by pulsed laser deposition

Cited by 44 publications

References 32 publications

Phase Transformation Studies of Metal Oxide Nanowires

Phase Transformation Studies of Metal Oxide Nanowires

Synthesis, Crystal Structure and Magnetic Properties of Bixbyite-type Vanadium Oxide Nitrides

SiO₂‐Surface‐Assisted Controllable Synthesis of TaON and Ta₃N₅ Nanoparticles for Alkene Epoxidation

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Synthesis of crystallized TaON and Ta3N5 by nitridation of Ta2O5 thin films grown by pulsed laser deposition

Cited by 44 publications

References 32 publications

Phase Transformation Studies of Metal Oxide Nanowires

Phase Transformation Studies of Metal Oxide Nanowires

Synthesis, Crystal Structure and Magnetic Properties of Bixbyite-type Vanadium Oxide Nitrides

SiO2‐Surface‐Assisted Controllable Synthesis of TaON and Ta3N5 Nanoparticles for Alkene Epoxidation

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Product

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SiO₂‐Surface‐Assisted Controllable Synthesis of TaON and Ta₃N₅ Nanoparticles for Alkene Epoxidation