Synthesis of Cu2NiSnS4 nanoparticles by hot injection method for photovoltaic applications

Kamble, Anvita; Mokurala, Krishnaiah; Gupta, Aman; Mallick, Sudhanshu; Bhargava, Parag

doi:10.1016/j.matlet.2014.09.065

Cited by 73 publications

(37 citation statements)

References 14 publications

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“…Nevertheless, CNTS has been synthesized through various synthesis method such as hot-injection, solvothermal and hydrothermal to obtain nanoparticle CNTS [142,[170][171][172][173][174]. CNTS has an energy band gap of 1.5∼1.6 eV similar to CZTS and a high optical absorption coefficient of ∼10 6 cm −1 [142,[170][171][172][173][174]. CNTS exhibits the zincblende crystal structure while a complementary theoretical calculation predicts the P4̅ 2c polytype as the most thermodynamically stable phase [175].…”

Section: Nickel (Ni)mentioning

confidence: 99%

Doping and alloying of kesterites

et al. 2019

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Attempts to improve the efficiency of kesterite solar cells by changing the intrinsic stoichiometry have not helped to boost the device efficiency beyond the current record of 12.6%. In this light, the addition of extrinsic elements to the Cu 2 ZnSn(S,Se) 4 matrix in various quantities has emerged as a popular topic aiming to ameliorate electronic properties of the solar cell absorbers. This article reviews extrinsic doping and alloying concepts for kesterite absorbers with the focus on those that do not alter the parent zinc-blende derived kesterite structure. The latest state-of-the-art of possible extrinsic elements is presented in the order of groups of the periodic table. The highest reported solar cell efficiencies for each extrinsic dopant are tabulated at the end. Several dopants like alkali elements and substitutional alloying with Ag, Cd or Ge have been shown to improve the device performance of kesterite solar cells as compared to the nominally undoped references, although it is often difficult to differentiate between pure electronic effects and other possible influences such as changes in the crystallization path, deviations in matrix composition and presence of alkali dopants coming from the substrates. The review is concluded with a suggestion to intensify efforts for identifying intrinsic defects that negatively affect electronic properties of the kesterite absorbers, and, if identified, to test extrinsic strategies that may compensate these defects. Characterization techniques must be developed and widely used to reliably access semiconductor absorber metrics such as the quasi-Fermi level splitting, defect concentration and their energetic position, and carrier lifetime in order to assist in search for effective doping/alloying strategies.

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Section: Nickel (Ni)mentioning

confidence: 99%

Doping and alloying of kesterites

et al. 2019

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“…Copper-nickel-tin-sulfur (Cu 2 NiSnS 4 ), one of the quaternary semiconductor materials, has been the focus of attention in recent years since its constituent elements are inexpensive, environmentally benign and widely existing in nature. Other important advantages, the CNTS material with p-type conductivity [1] has a high optical absorption coefficient [10 4 -10 5 cm −1 ] in the visible region and suitable direct optical band gap in the range of 1.1-1.5 eV [2]. These excellent properties enable to CNTS material to be used as an absorber in low-cost solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…These excellent properties enable to CNTS material to be used as an absorber in low-cost solar cells. In the literature, CNTS materials have been synthesized by several methods such as electrodeposition [3,4], solvothermal [5][6][7], hydrothermal [1], hot injection [2], electrospinning [8], spin coating [9] and spray pyrolysis [10,11]. This study focused on describing the chemical spray pyrolysis technique.…”

Section: Introductionmentioning

confidence: 99%

One-step spray of Cu2NiSnS4 thin films as absorber materials for photovoltaic applications

Dridi

Bitri

Mahjoubi

et al. 2020

J Mater Sci: Mater Electron

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A simple one-step «Spray Pyrolysis» technique was developed for preparing Cu 2 NiSnS 4 (CNTS) thin film followed by an annealing treatment process. Originally, the spray technique was successfully used to deposit the thin film onto glass substrate at 250 °C for 60 min spray duration. Again, the deposited thin film was annealed in a sulfur atmosphere at a temperature of 500 °C during 30 min. The sulfured thin film exhibits (111), (220) and (311) orientations correspond well to the cubic CNTS structure and other impurity compounds. The SEM data exhibit a uniform, rough and compact topography of CNTS thin films with an average-thickness of 1.36 µm. The absorption coefficient is found to be higher than 10 4 cm −1 in the visible region while the direct band energy of 1.62 eV, which is eminently suitable for use as an absorber in the solar cell. The complex impedance diagrams indicate the decrease of resistance by increasing temperature, which attributes to a semiconductor behavior. The close values of activation energies 0.63 and 0.54 eV determined from both angular frequency and DC conductivity indicate that the carrier transport mechanism is thermally activated.

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“…Cu 2 NiSnS 4 has ah igha bsorption coefficient and its band gap (around 1.4 eV) matches the desired absorption range of the solar spectrum. [5,6] Cu 2 NiSnS 4 contains the naturally abundant elements Cu, Ni, Sn, andS .This special advantage, as well as its relatively low toxicity, could lead to its large-scale commercial application towardc reatingl ow cost and sustainable thin film solar cells. Many studies have been performed on nanostructured chalcopyritem aterials because the shape and size of these nanoscale semiconductors may exert as ignificant influence on their optoelectronic function and device performance, and sometimes induce unique physical and chemical properties different from their bulk counterparts.…”

Section: Introductionmentioning

confidence: 99%

Nanoconfined Solvothermal Synthesis and Characterization of Ultrafine Cu₂NiSnS₄ Nanotubes

Shi

Zheng

2015

ChemPlusChem

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Ultrafine nanotubes of Cu2NiSnS4 having an average diameter of 4 nm were prepared by a convenient one‐step nanoconfined solvothermal approach. The confined reaction took place within the pores of anodic aluminum oxide (AAO). The structure, morphology, composition, optical absorption, and magnetic properties of the as‐prepared samples were characterized using X‐ray powder diffraction, transmission electron microscopy, energy‐dispersive X‐ray spectroscopy, scanning electron microscopy, UV/Vis spectroscopy, and superconducting quantum interference device measurements. A Rolling‐up mechanism was proposed to explain the formation of Cu2NiSnS4 nanotubes. Thin films prepared from the nanotubes showed a photoelectric response, thus indicating a potential application for photovoltaic devices.

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Synthesis of Cu2NiSnS4 nanoparticles by hot injection method for photovoltaic applications

Cited by 73 publications

References 14 publications

Doping and alloying of kesterites

Doping and alloying of kesterites

One-step spray of Cu2NiSnS4 thin films as absorber materials for photovoltaic applications

Nanoconfined Solvothermal Synthesis and Characterization of Ultrafine Cu₂NiSnS₄ Nanotubes

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Synthesis of Cu2NiSnS4 nanoparticles by hot injection method for photovoltaic applications

Cited by 73 publications

References 14 publications

Doping and alloying of kesterites

Doping and alloying of kesterites

One-step spray of Cu2NiSnS4 thin films as absorber materials for photovoltaic applications

Nanoconfined Solvothermal Synthesis and Characterization of Ultrafine Cu2NiSnS4 Nanotubes

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Nanoconfined Solvothermal Synthesis and Characterization of Ultrafine Cu₂NiSnS₄ Nanotubes