Cu 2 ZnSnS 4 (CZTS) thin films were deposited from a single cationic bath by Successive Ionic Layer Adsorption and Reaction (SILAR) method. Regular SILAR route for CZTS had the drawback of preferential adsorption of copper and tin cations in comparison with zinc. This resulted in Cu 3 SnS 4 (CTS) and Cu 2 S phases rather than phase pure CZTS films. A modified SILAR route, with a separate bath for Zn 2+ ions, circumvented the difficulty and hence led to phase pure CZTS thin films. UV-visible absorption spectra of the CZTS thin films showed absorption coefficients of ~ 10 4 cm −1 and a band gap of 1.5 eV. Combined van der Pauw and Hall measurements of CZTS thin films showed a resistivity of approximately 1.51 × 10 2 Ωcm, carrier density of ~ 1.28 × 10 17 cm −3 , and mobility ~ 0.32 cm 2 V −1 s −1. A completely solution processed P-N junction was fabricated and characterized by forming glass/FTO/TiO 2 /CdS/CZTS multilayer.