2016
DOI: 10.1007/s12633-015-9358-8
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Synthesis of Cubic Nanocrystalline Silicon Carbide (3C-SiC) Films by HW-CVD Method

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Cited by 14 publications
(5 citation statements)
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“…It is both extremely stable and inertness, and it is able to work at high frequency, high-temperature, and in harsh environments, with better performances than other silicon-based devices. It is a polymorphic material with more than 200 different known polytypes, among which the most used are the cubic 3C-SiC and the hexagonal 4H-SiC 12,13 . 4H-SiC is being used for high power electronic devices, while 3C-SiC has a surface with chemical-physical properties that makes it highly suitable for biotechnological applications.…”
Section: Introductionmentioning
confidence: 99%
“…It is both extremely stable and inertness, and it is able to work at high frequency, high-temperature, and in harsh environments, with better performances than other silicon-based devices. It is a polymorphic material with more than 200 different known polytypes, among which the most used are the cubic 3C-SiC and the hexagonal 4H-SiC 12,13 . 4H-SiC is being used for high power electronic devices, while 3C-SiC has a surface with chemical-physical properties that makes it highly suitable for biotechnological applications.…”
Section: Introductionmentioning
confidence: 99%
“…The γ-SiC NF possesses all real vibrational frequencies (VFs) (Figure ) suggesting its thermodynamic stability and feasibility of experimental synthesis. The Si–C sp stretching vibrations are observed between 1445–1526 cm –1 , whereas the sp 2 stretching of Si–C is located between 1000–1058 cm –1 , which is comparatively higher than that of cubic SiC nanocrystals and the SiC epitaxial layer …”
Section: Resultsmentioning
confidence: 89%
“…[49][50][51] The distinct twin peaks at 101.50 and 102.27 eV are attributed to C-Si-C covalent bonds at 150 s of sputtering, which are much stronger signals in the Si-co-HGCS than Si-LGCS and S-HGCS. In Raman spectra, the enhancement of the intensity of the Si-C peak at 956 cm −1 indicates an increase in the Si-C bond, [52] reflecting the strong covalent links between the Si and carbon layers. This is further confirmed by the stronger Si-C stretching vibration peak at ≈800 cm −1 in FTIR spectra (Figure 2c).…”
Section: Building Robust Covalent Coating Structure On Simpsmentioning
confidence: 99%