Synthesis of cubic zirconium(IV) nitride, c-Zr3N4, in the 6–8 GPa pressure region

Taniguchi, Takashi; Dzivenko, Dmytro; Riedel, Ralf; Chauveau, Thierry; Zerr, Andreas

doi:10.1016/j.ceramint.2019.06.263

Cited by 9 publications

(9 citation statements)

References 28 publications

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“…This is because these nitrides have an inclination of decomposition, oxidization, or difficulty of synthesis condition. [106,[154][155][156] Besides, there is an abundance of literature on the use of Ga-based nitrides in photocatalysis. GaN is a type of bulk nitride material with d 10 electronic configuration that is active in overall water splitting, and it has a wide band gap of 3.4 eV.…”

Section: Other Tmns As Semiconductorsmentioning

confidence: 99%

Recent Advances in Transition Metal Nitride‐Based Materials for Photocatalytic Applications

Cheng

Pang

et al. 2021

Adv Funct Materials

118

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Photocatalysis is a promising and convenient strategy to convert solar energy into chemical energy for various fields. However, photocatalysis still suffers from low solar energy conversion efficiency. Developing state of the art photocatalysts with high efficiency and low cost is a huge challenge. Transition metal nitrides (TMNs) as a class of metallic interstitial compounds have attracted significant attention in photocatalytic applications. In fact, TMNs exhibit multifunctional properties in various photocatalytic systems. This review is the first attempt that summarizes recent research on TMNs‐based materials in various photocatalytic applications. Different roles of TMNs materials in photocatalytic systems including semiconductor active components, co‐catalysts, inter‐band excitation, and surface plasmon resonance components are systematically discussed and summarized. The fundamentals, latest progress, and emerging opportunities for further improving the performances of TMNs‐based materials for photocatalysis are also discussed. Finally, some challenges facing TMNs, and perspectives on their future that are relevant for furthering research in the area of photocatalysis are also proposed.

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Section: Other Tmns As Semiconductorsmentioning

confidence: 99%

Recent Advances in Transition Metal Nitride‐Based Materials for Photocatalytic Applications

Cheng

Pang

et al. 2021

Adv Funct Materials

118

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“…The exciton binding energy of these materials is determined to be much larger than that of the accepted value for GaAs, 4.2 ± 0.3 meV . This combined with the ability to deposit c -Zr 3 N 4 as thin films and the potential to make large single crystals using the synthesis methods in ref makes these nitrides promising substitutes for GaAs in demanding IR-LED applications.…”

Section: Resultsmentioning

confidence: 92%

“…The measured hardness of porous c -Zr 2.86 (N 0.88 O 0.12 ) 4 was determined to be 12.0 GPa, but it is expected to be more than 30 GPa for dense samples; , thin films of c -Zr 3 N 4 are known to have a hardness of 36 GPa . In addition, the quantity of c -Zr 3 N 4 that can be produced has been improving, , allowing for the potential production of large amounts of high quality material making c -Zr 3 N 4 more suitable for industrial electronic and mechanical applications.…”

Section: Introductionmentioning

confidence: 99%

Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr_3–x(N_1–xO_x)₄

Boyko

Zerr²,

Moewes

2021

ACS Appl. Electron. Mater.

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Research has shown that group IVB nitrides have a narrow direct electronic band gap, but there have been few investigations into the dependence of the electronic band gap on cation defects and whether tuning the electronic band gap is possible by controlling the level of substitutional oxygen in c-Zr 3−x (N 1−x O x ) 4 . We use a combination of soft X-ray spectroscopy and density functional theory to study the electronic structure and determine the electronic band gap as well as the exciton binding energy of an oxygen-bearing defect zirconium nitride, c-Zr 2.86 (N 0.88 O 0.12 ) 4 , and oxygen-free hafnium nitride, c-Hf 3 N 4 . Moreover, we extend our structural model to consider the dependence of the electronic band gap on oxygen substitution in c-Zr 3−x (N 1−x O x ) 4 . The results suggest that the electronic band gap can be precisely controlled between 1.47 and 1.84 eV (674−844 nm) by adjusting the stoichiometry, without adversely affecting the electronic structure. The exciton binding energy of c-Zr 2.86 (N 0.88 O 0.12 ) 4 is estimated to be 37 meV, much larger than current materials being used (GaAs). This larger exciton binding energy combined with both the direct narrow electronic band gap and stable electronic structure demonstrates that this material is an ideal candidate to replace currently used materials, such as GaAs, in infrared light-emitting diode applications.

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“…Seeking adequate material alternatives to molybdenum as the element for the capsule is an issue that needs resolving. The use of platinum capsules has been reported to produce Pt−Zr impurities in ZrN synthesis, 27 and the melting point of Au is too low for the application.…”

Section: Synthesis Of C-zr 3 N 4 and δ-Zrn Crystals Via A Metathesis ...mentioning

confidence: 99%

“…In 2019, Taniguchi et al reported that nearly single-phase c-Zr 3 N 4 could be obtained at 7.7 GPa using a precursor as the starting material. 27 In this study, we have investigated whether c-Zr 3 N 4 can be synthesized via a metathesis reaction at temperatures and pressures that a belt-type high-pressure apparatus can reach, and we examined the synthesis of c-Zr 3 N 4 using in situ X-ray diffraction (XRD) 28 at 9.3 GPa using a 6−6 type multi-anvil high-pressure apparatus. 29 Moreover, hydrostatic compression experiments were conducted on c-Zr 3 N 4 to re-examine the bulk modulus that have shown discrepancies in previous reports.…”

Section: Introductionmentioning

confidence: 99%

High-Pressure Synthesis of Th₃P₄-Type c-Zr₃N₄ Using a Metathesis Reaction and In Situ X-ray Diffraction Studies of the Formation Process

Kawamura

Shibazaki

Yusa

et al. 2023

Crystal Growth & Design

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We have successfully prepared highly crystalline Th3P4-type Zr3N4 (c-Zr3N4) using a high-pressure metathesis reaction utilizing a belt-type high-pressure apparatus and determined synthesis conditions. A combination of ZrCl4 and Ca3N2 was used as the Zr and N sources, respectively, which enabled the synthesis of c-Zr3N4 crystals, whereas another combination of Zr and N sources produced only NaCl-type ZrN (δ-ZrN). It was found that 6.5 GPa was the lowest synthesis pressure available for the synthesis of c-Zr3N4 at temperatures ranging from 1400 to 1500 °C. In situ X-ray diffraction was performed at 9.3 GPa, which revealed that the appearance of the intermediate phase during heating was key to the synthesis of c-Zr3N4, when the combination of ZrCl4 and Ca3N2 was used as the starting material.

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Synthesis of cubic zirconium(IV) nitride, c-Zr3N4, in the 6–8 GPa pressure region

Cited by 9 publications

References 28 publications

Recent Advances in Transition Metal Nitride‐Based Materials for Photocatalytic Applications

Recent Advances in Transition Metal Nitride‐Based Materials for Photocatalytic Applications

Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr_3–x(N_1–xO_x)₄

High-Pressure Synthesis of Th₃P₄-Type c-Zr₃N₄ Using a Metathesis Reaction and In Situ X-ray Diffraction Studies of the Formation Process

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Synthesis of cubic zirconium(IV) nitride, c-Zr3N4, in the 6–8 GPa pressure region

Cited by 9 publications

References 28 publications

Recent Advances in Transition Metal Nitride‐Based Materials for Photocatalytic Applications

Recent Advances in Transition Metal Nitride‐Based Materials for Photocatalytic Applications

Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4

High-Pressure Synthesis of Th3P4-Type c-Zr3N4 Using a Metathesis Reaction and In Situ X-ray Diffraction Studies of the Formation Process

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Synthesis of cubic zirconium(IV) nitride, c-Zr3N4, in the 6–8 GPa pressure region

Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr_3–x(N_1–xO_x)₄

High-Pressure Synthesis of Th₃P₄-Type c-Zr₃N₄ Using a Metathesis Reaction and In Situ X-ray Diffraction Studies of the Formation Process