2003
DOI: 10.1016/s0927-0248(03)00138-7
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Synthesis of CuInS2 by chemical route: optical characterization

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Cited by 58 publications
(28 citation statements)
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“…where B is a constant and n is an index indicating the type of the transition. It is known that the value of n for direct band gap semiconductor is 1/2, and for indirect band gap semiconductor is 2 [22]. From extrapolation (ahv) 2 versus (hv), band gap of cobalt ferrite can be estimated at (ahv) 2 = 0, as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…where B is a constant and n is an index indicating the type of the transition. It is known that the value of n for direct band gap semiconductor is 1/2, and for indirect band gap semiconductor is 2 [22]. From extrapolation (ahv) 2 versus (hv), band gap of cobalt ferrite can be estimated at (ahv) 2 = 0, as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…It is known that the value of n for direct band gap semiconductor is 1/2, and for indirect band gap semiconductor is 2 [39]. From extrapolation (ahm) 2 versus (hm) plot to (ahm) 2 = 0 band gap of CIS nps can be calculated.…”
Section: Resultsmentioning
confidence: 99%
“…[22][23][24] Hence CuInS 2 is an ideal material for use in photovoltaic devices such as solar panels, [24] with the added advantage of posing only a minimal toxicological threat to the environment. [25] CuInS 2 occurs naturally as the rare mineral roquesite in high-temperature hydrothermal veins, usually in the form of inclusions in chalcopyrite (CuFeS 2 ), sphalerite (ZnS) or bornite (Cu 5 FeS 4 ). [26] Synthesis of CuInS 2 has been achieved via a number of methods, including solidstate reaction, [27] solvothermal synthesis, [28] static hydrothermal synthesis, [29] chemical vapour deposition [22,30,31] and spray pyrolysis.…”
Section: Synthesis Of Cuinsmentioning
confidence: 99%