“…From the XRD spectrum for SiC, we can conclude that the characteristic diffraction peaks for SiC are located at 35.6°, 41.4°, 60.1°, and 71.9°, corresponding to the (111), ( 200), (220), and (311) crystal planes, respectively, and SF is the stacking fault of SiC. 40,41 The position and intensity of the diffraction peaks in the diffraction patterns for SiC and F-SiC do not change, indicating that the surface modification of SiC by FAS has no effect on the microstructure of SiC. The diffraction peaks of 26.5°, 41.6°, 43.8°, 55.1°, 76.1°, and 82.2°are the characteristic peaks of h-BN, corresponding to the (002), (100), ( 101), (004), (110), and (112) planes, respectively.…”