2020
DOI: 10.1016/j.matchemphys.2020.122648
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Synthesis of diameter-fluctuating silicon carbide nanowires for excellent microwave absorption

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Cited by 27 publications
(12 citation statements)
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“…Detailed structural information about the SiC, h-BN, and BN@F-SiC composites was obtained by XRD, as shown in Figure . From the XRD spectrum for SiC, we can conclude that the characteristic diffraction peaks for SiC are located at 35.6°, 41.4°, 60.1°, and 71.9°, corresponding to the (111), (200), (220), and (311) crystal planes, respectively, and SF is the stacking fault of SiC. , …”
Section: Resultsmentioning
confidence: 93%
See 1 more Smart Citation
“…Detailed structural information about the SiC, h-BN, and BN@F-SiC composites was obtained by XRD, as shown in Figure . From the XRD spectrum for SiC, we can conclude that the characteristic diffraction peaks for SiC are located at 35.6°, 41.4°, 60.1°, and 71.9°, corresponding to the (111), (200), (220), and (311) crystal planes, respectively, and SF is the stacking fault of SiC. , …”
Section: Resultsmentioning
confidence: 93%
“…From the XRD spectrum for SiC, we can conclude that the characteristic diffraction peaks for SiC are located at 35.6°, 41.4°, 60.1°, and 71.9°, corresponding to the (111), ( 200), (220), and (311) crystal planes, respectively, and SF is the stacking fault of SiC. 40,41 The position and intensity of the diffraction peaks in the diffraction patterns for SiC and F-SiC do not change, indicating that the surface modification of SiC by FAS has no effect on the microstructure of SiC. The diffraction peaks of 26.5°, 41.6°, 43.8°, 55.1°, 76.1°, and 82.2°are the characteristic peaks of h-BN, corresponding to the (002), (100), ( 101), (004), (110), and (112) planes, respectively.…”
Section: Resultsmentioning
confidence: 97%
“…Firstly, SiO and CO gas sources were produced with the reduction of SiO 2 and CO 2 through reactions ( 1)-( 3) [46]. SiC embryos were formed from heterogeneous nucleation by the solid-gas interaction of reaction ( 4), but the growth of SiC nanowires is determined by reaction (5) with gas-gas interaction [47,48]. As observed, the growth of SiCnw is decided by the separate partial pressure of CO and SiO vapour.…”
Section: Mechanism Discussionmentioning
confidence: 99%
“…Materials based on silicon carbide absorb microwaves well due to their thermal and chemical stability, as well as good resistance to the environment [7].…”
Section: Introductionmentioning
confidence: 99%