Synthesis of Dimeric Iminoalanes by Oxidative Addition of Azides to (Cp*Al)4:  Structural Characterization of (Cp*AlNSitBu3)2 (Cp* = C5Me5)

Schulz, Stephan; Voigt, Andreas; Roesky, Herbert W.; Häming, Ludger; Herbst‐Irmer, Regine

doi:10.1021/om960138j

Cited by 55 publications

(61 citation statements)

References 19 publications

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“…[21] Finally, 184.0/184.2 pm and 92.9/93.28 were measured for R = C 5 (CH 3 ) 5 and R' = SitBu 3 . [22] All these values are in pleasing agreement to the ones calculated for [HAlNH] 2 .…”

Section: Alnhsupporting

confidence: 82%

Possible Pathways of CVD Processes Leading to III–V Semiconductors via a Two‐Dimensional Growth

Himmel

2005

ChemPhysChem

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Quantum-chemical calculations were carried out to shed more light upon possible first intermediates formed during chemical vapour deposition (CVD) processes leading to III-V semiconductors. Information about possible structures of intermediates and about thermodynamic properties in dependence of the temperature were collected. Because some of the systems calculated herein contain a substantial number of atoms (up to 144), it is limited to intermediates on the way to solid AIN. According to our suggestion, the first intermediates are species with the overall formula AINH2, Al2N2H4, Al3N3H6, AI5N5H8, AI7N7H, and Al9N9H, AI12N12H12. In further calculations the growth of a second layer, on top of the first layer, which is modelled by the Al12N12H12 cluster, is simulated. The Al12N12H12 "surface" offers two places for the attachment of an Al3N3H6 ring. At temperatures of 1000 K, the deltaG value for this attachment is only slightly negative, which suggests that the molecules can move relatively freely on the surface. This might be of importance for a defect-free growth process. Up to four layers are built on top of the first Al12N12H12 layer leading to Al24N24H24 (two layers), Al36N36H36 (three layers) and Al48N48H48 (four layers). The structures are compared with that of solid AIN in its most stable Wurzit-type structure.

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“…[21] Finally, 184.0/184.2 pm and 92.9/93.28 were measured for R = C 5 (CH 3 ) 5 and R' = SitBu 3 . [22] All these values are in pleasing agreement to the ones calculated for [HAlNH] 2 .…”

Section: Alnhsupporting

confidence: 82%

Possible Pathways of CVD Processes Leading to III–V Semiconductors via a Two‐Dimensional Growth

Himmel

2005

ChemPhysChem

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“…The title compound was prepared by a literature method (Schulz et al, 1996). Suitable crystals were obtained by recrystallization from a hexane solution.…”

Section: Methodsmentioning

confidence: 99%

Azidotriphenylsilane: a new determination

Wharf

Bélanger‐Gariépy

2004

Acta Cryst E

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The title compound, (I), C18H15N3Si, is monomeric with quasi‐tetrahedral geometry around Si. The azide group (—Nα—Nβ—Nγ) is disordered. One form has (Nα—Nβ) > d(Nβ—Nγ); the other has d(Nα—Nβ) < d(Nβ—Nγ). In contrast, the mesityl analogue, (II), has d(Nα—Nβ) only slightly less than d(Nβ—Nγ). As expected, on going from (I) to (II), d(Si—Nα), d(Si—C)ave and angle (C—Si—C)ave increase, while angle (C—Si—Nα)ave decreases.

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“…torted tetrahedrally with N-Si distances of approximately 174 pm which are insignificantly larger than in [Cp*Al -NSi i Pr 3 ] 2 (173.0(2) pm [12]) with triply coordinated N atoms. All these structural parameters exclude intramolecular steric strain and it is even more surprising, that it is impossible to zincate the NH moieties once more to form an imide.…”

Section: (2)mentioning

confidence: 78%

“…The metalation of aniline [10] or naphthylamine [11] in THF with diethylmagnesium yielded the halide-free hexameric (tetrahydrofuran)magnesium phenylimide with a hexagonal Mg 6 N 6 -prism. The dimeric pentamethylcyclopentadienylaluminium triisopropylsilylimide was not obtained by a metalation of a primary amine, but via the reaction of the tetrameric Al(I)-derivative [AlCp*] 4 with triisopropylsilylazide [12].…”

Section: Introductionmentioning

confidence: 99%

Zincation of primary amines: synthesis and structures of dimeric alkylzinc amides

Westerhausen

Bollwein

Pfitzner

et al. 2001

Inorganica Chimica Acta

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The zincation of triisopropylsilylamine with dimethyl-and diethylzinc yields dimeric methylzinc (1) and ethylzinc triisopropylsilylamide (2). Complex 1 crystallizes in the monoclinic space group P2 1 /n, 2 in P2 1 /c. The reaction of dimethylzinc with adamantylamine gives [(THF)ZnMe][(AdNH 2 )ZnMe][m-N(H)Ad] 2 (3) which crystallizes in the monoclinic space group P2 1 /n. All these compounds have central Zn 2 N 2 cycles. Contrary to 1 and 2 with triply coordinated metal centers, the zinc atoms in 3 show a distorted tetrahedral coordination sphere due to the contact to the neutral coligands THF and adamantylamine.

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Synthesis of Dimeric Iminoalanes by Oxidative Addition of Azides to (CpAl)₄: Structural Characterization of (CpAlNSi^tBu₃)₂ (Cp* = C₅Me₅)

Cited by 55 publications

References 19 publications

Possible Pathways of CVD Processes Leading to III–V Semiconductors via a Two‐Dimensional Growth

Possible Pathways of CVD Processes Leading to III–V Semiconductors via a Two‐Dimensional Growth

Azidotriphenylsilane: a new determination

Zincation of primary amines: synthesis and structures of dimeric alkylzinc amides

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