Synthesis of fibrous reticulate nanocrystalline n-type MoBi2(Se1−xTex)5 thin films: Thermocooling applications

Salunkhe, Manikrao M.; Kharade, Rohini R.; Kharade, Suvarta D.; Mali, Sawanta S.; Patil, Pramod S.; Bhosale, Popatrao N.

doi:10.1016/j.materresbull.2012.08.026

Cited by 20 publications

(15 citation statements)

References 27 publications

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“…It can be easily obtained from the electrical conductivity and Seebeck coefficient. 35 The temperature dependence of power factor were shown in Fig. 8(c), it also shows the linear relationship throughout temperature range.…”

Section: Resultsmentioning

confidence: 78%

Microwave assisted synthesis, characterization and thermoelectric properties of nanocrystalline copper antimony selenide thin films

et al. 2014

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In the present work, we have synthesized p-type copper antimony selenide (Cu 3 SbSe 4 ) thin films in an aqueous alkaline medium using a microwave assisted synthesis technique. The deposited thin films were characterized by UV-Vis-NIR spectroscopy, X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), high-resolution transmission electron microscopy (HRTEM) and thermoelectric techniques. On the basis of experimental results, a possible reaction mechanism has been discussed in detail. The band gap of the as deposited film is 1.94 eV and after annealing it reaches 1.87 eV for Cu 3 SbSe 4 . XRD results indicate that the as deposited thin films of CuSbSe 2 have an orthorhombic crystal structure with secondary mixed phases and after annealing this is converted to Cu 3 SbSe 4 having a pure tetragonal crystal structure. FESEM micrographs of Cu 3 SbSe 4 showed a spherically diffused granular morphology having an average grain size of 25 nm. The HRTEM result of Cu 3 SbSe 4 shows good crystallinity with a lattice spacing of 0.327 nm along the (112) plane. The EDS spectrum shows the presence of Cu, Sb and Se elements. The thermoelectric figure of merit (ZT) of the as deposited film is calculated to be 0.059 at 300 K and that of annealed Cu 3 SbSe 4 is found to be 0.141 at 300 K.

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Section: Resultsmentioning

confidence: 78%

Microwave assisted synthesis, characterization and thermoelectric properties of nanocrystalline copper antimony selenide thin films

et al. 2014

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“…21 When all the metal ions and chalcogen ions in solution vanish with the increase in deposition time, the film's thickness remains constant, called the terminal thickness of the deposited thin film. 24 Generally, a slow reaction rate results in the formation of good-quality and adherent thin films. 21 Hence, our developed arrested precipitation technique is effective compared with routine chemical bath processes.…”

Section: Growth and Reaction Mechanisms Of The Thin Film Formationmentioning

confidence: 99%

“…The negative polarity of the generated thermo EMF indicates that all CSSe thin films are n-type semiconductors. 22,24 The carrier concentration and the mobility for all samples were calculated using eqn (13) and (14) as follows: where m is the mobility, n is the carrier concentration and e is the electronic charge. From Table 4, it can be seen that the carrier concentration increases exponentially and the mobility decreases with the increase in deposition time.…”

Section: Electrical Studiesmentioning

confidence: 99%

Development of nanocoral-like Cd(SSe) thin films using an arrested precipitation technique and their application

et al. 2014

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Nanocrystalline cadmium sulfoselenide thin films have been synthesized using a self-organized arrested precipitation technique with different deposition times using triethanolamine as a complexing agent. Optical, structural, morphological and photoelectrochemical solar cell properties were investigated as a function of deposition time. A UV-Vis-NIR absorption study suggested a direct allowed transition type and the band gap energy decreased from 2.01 to 1.86 eV with the increase in deposition time. X-ray diffraction studies revealed that the thin films are nanocrystalline by nature with a pure hexagonal crystal structure and a calculated crystallite size of 51-68 nm. Field emission scanning electron microscopy demonstrated that the surface morphology was altered from nanoflakes to assorted nanoflakes-nanospheres and finally to a nanocoral-like morphology. X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy showed that the composition of the Cd(SSe) thin films was of good stoichiometry. Electrical conductivity and thermoelectric power measurements confirmed that the deposited films were n-type semiconductors. From J-V measurements, a highest photo-conversion efficiency of 0.57% was achieved.The significant boost in the PEC performance might be due to the improved crystallinity along with lower values of the grain boundary resistance, dislocation density and the microstrain of the Cd(SSe) thin films.

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“…Suvarta et al have prepared the MoBi 2‐x Cu x Se 4 thin film and have reported that the material obtained was not a mixture of MoSe 2 , Bi 2 Se 3 and Cu 2 Se but an MoBi 2‐x Cu x Se 4 solid solution. Salunkhe et al detected Bi 2 Te 3 , Bi 2 Se 3 , MoTe 2 and MoSe 2 phases in the nanocrystalline rhombohedral MoBi 2 (Se 1‐x Te x ) 5 thin films and stated that the formation of solid solution is expected because the phases belong to the rhombohedral crystal structure. Salunkhe et al observed Bi 2 Te 3 and Mo 3 Te 4 phases in the nanocrystalline MoBi 2 Te 5 thin films that have the solid solution of the rhombohedral structure.…”

Section: Resultsmentioning

confidence: 99%

Photoresponse of novel mixed metal chalcogenide MoSb_2-x Cu_x Se₄ /CdS thin film solar cells fabricated by CBD method using citric acid

Vijila

Henry

Daniel

et al. 2017

Int. J. Energy Res.

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Summary In this present work, novel MoSb2‐xCuxSe4 thin films were prepared for different copper concentrations (x = 0.0, 0.1, 0.2 and 0.3 M) by a simple chemical bath deposition method. XRD patterns revealed the phase conversion of orthorhombic Sb2Se3 into Cu3SbSe3 by the incorporation of copper content with successive peak shift towards higher angles. Average crystallite was found to be 8, 17 and 25 nm for 0.1, 0.2 and 0.3 M Cu content, respectively. Fourier transform infrared spectra witnessed the presence of functional groups in citric acid and metal oxide vibrations. Field emission scanning electron microscope analysis picturized the grain size growth with respect to Cu content. UV–Vis analysis showed higher absorption in the visible region, and band gap values were found to be 2.08 − 1.69 eV. Hall effect studies confirm the p‐type nature of the material. The photocurrent analysis shows higher photoconversion efficiency of 1.196% for 0.3 M copper content. Copyright © 2017 John Wiley & Sons, Ltd.

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Synthesis of fibrous reticulate nanocrystalline n-type MoBi2(Se1−xTex)5 thin films: Thermocooling applications

Cited by 20 publications

References 27 publications

Microwave assisted synthesis, characterization and thermoelectric properties of nanocrystalline copper antimony selenide thin films

Microwave assisted synthesis, characterization and thermoelectric properties of nanocrystalline copper antimony selenide thin films

Development of nanocoral-like Cd(SSe) thin films using an arrested precipitation technique and their application

Photoresponse of novel mixed metal chalcogenide MoSb_2-x Cu_x Se₄ /CdS thin film solar cells fabricated by CBD method using citric acid

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Synthesis of fibrous reticulate nanocrystalline n-type MoBi2(Se1−xTex)5 thin films: Thermocooling applications

Cited by 20 publications

References 27 publications

Microwave assisted synthesis, characterization and thermoelectric properties of nanocrystalline copper antimony selenide thin films

Microwave assisted synthesis, characterization and thermoelectric properties of nanocrystalline copper antimony selenide thin films

Development of nanocoral-like Cd(SSe) thin films using an arrested precipitation technique and their application

Photoresponse of novel mixed metal chalcogenide MoSb2-x Cux Se4 /CdS thin film solar cells fabricated by CBD method using citric acid

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Product

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Photoresponse of novel mixed metal chalcogenide MoSb_2-x Cu_x Se₄ /CdS thin film solar cells fabricated by CBD method using citric acid