The crystal growth and characterization
of novel tourmaline
compounds
are important in fundamental and applied fields as new tourmaline
species and promising piezoelectric materials. Single crystals of
Ga,Ge-rich tourmalines (up to 12.43 wt % GeO2 and 11.03
wt % Ga2O3) were grown on a seed as a newly
formed, up to 1.2 mm thick layer in hydrothermal solution at 650 °C
and 100 MPa. Two crystallizing schemes were developed with quartz
and corundum nutrients in the condition of a normal temperature solubility
factor and with topaz and quartz nutrients using a reverse temperature
solubility factor. The chemical composition and crystal structure
of grown tourmalines as well as the distribution of gallium and germanium
between crystallographic sites were studied by electron microprobe
analysis (EMPA), single-crystal X-ray analysis (SCXRD), and Mössbauer
and Raman spectroscopy. The unit cell parameters and refined crystal-chemical
formulae of two high-quality single-crystal samples are as follows: a = 16.0518(7) Å, c = 7.1874(4) Å, V = 1603.80(13), and
X
(Na0.66□0.34)
Y
(Fe1.78
2+Al0.5Fe0.36
3+Ni0.19Ti0.17)
Z
(Al4.91Ga1.09)
T
(Si4.78Ge0.94Al0.28O18) (BO3)3
V
(OH)3
W
[(OH)0.42O0.58]; a = 16.0083(8), c = 7.1508(4)
Å, V = 1587.00(14), and
X
(Na0.17□0.83)
Y
(Fe1.31
2+Al1.35Fe0.27
3+Ni0.07)
Z
(Al5.43Ga0.57)
T
(Si5.15Ge0.55Al0.30O18) (BO3)3
V
(OH)3
W
[(OH)0.51O0.49]. Based on the Raman spectroscopy data, it is now possible to indicate
the predominance of either divalent or trivalent cations in the Y site for tourmalines, whereas the Z site
is fully occupied by trivalent cations.