Anion substitution
is an emerging strategy to enhance the photoelectrochemical
performance of metal oxide photoelectrodes. In the present work, we
investigate the effect of fluorine incorporation on the photoelectrochemical
water oxidation performance of BiVO4 and Mo:BiVO4 thin film photoanodes. The BiVO4 and Mo:BiVO4 thin film photoanodes were prepared by a straightforward organometallic
solution route involving dip coating and subsequent calcination in
air. Fluorine modification was realized by applying a soft and low-cost
solid–vapor reaction route involving fluorine-containing polymers
and an inert gas atmosphere leading to novel F:BiVO4 and
F/Mo:BiVO4 thin film photoanodes with substantially increased
photoelectrochemical water oxidation properties. Deposition of the
cobalt phosphate (CoPi) water oxidation catalyst allowed further enhancement
of the photoelectrochemical performance. While Mo doping mainly improves
light-harvesting, charge transport, and charge separation efficiencies,
F modification was demonstrated to primarily affect the charge transfer
efficiency at the semiconductor–electrolyte interface, thereby
leading to a photocurrent increase of 40 and 21% upon fluorination
of the BiVO4 and Mo:BiVO4 photoanodes, respectively,
and an applied bias photon-to-current efficiency increase of 35 and
5%, respectively. We thereby could demonstrate that cation and anion
co-doping in BiVO4 as demonstrated for Mo and F allows
combining the photoelectrochemically relevant benefits associated
with each type of dopant.