Synthesis of freestanding water-soluble indium oxide nanocrystals capped by alanine nitric acid via ligand exchange for thin film transistors and effects of ligands on the electrical properties

Choi, Jin-Kyu; Koh, Y.K.; Jeong, Hyun‐Dam

doi:10.1016/j.matchemphys.2015.07.002

Cited by 2 publications

(1 citation statement)

References 41 publications

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“…For the In 2 O 3 NC TFTs with the BT-5 NC/SiO 2 system, the trapped density was estimated to be 1.4 × 10 13 , which is approximately 2 times lower than that of TFT with only SiO 2 , indicating that the use of the BT-5 NC/SiO 2 gate dielectric reduces the density of localized trap states at the dielectric channel interface. The stabilities against repeated measurements are closely related to the number of trap sites and the trap lifetime. , The trapping of electrons during the operation produced electrons that cannot be released before the next sweep; these electrons cannot participate in charge transport, leading to a significant change in the subthreshold slope and μ. As shown in Figure , BT-5 NC/SiO 2 -based TFT showed electrical stability against a repeated measurement with the same V DS for 10 V without significant drops in mobility, subthreshold slope, and on/off ratio (Figure (a)).…”

Section: Resultsmentioning

confidence: 99%

Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor

Pham

Yang

Lee

et al. 2016

ACS Appl. Mater. Interfaces

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Barium titanate nanocrystals (BT NCs) were prepared under solvothermal conditions at 200 °C for 24 h. The shape of the BT NCs was tuned from nanodot to nanocube upon changing the polarity of the alcohol solvent, varying the nanosize in the range of 14-22 nm. Oleic acid-passivated NCs showed good solubility in a nonpolar solvent. The effect of size and shape of the BT NCs on the ferroelectric properties was also studied. The maximum polarization value of 7.2 μC/cm(2) was obtained for the BT-5 NC thin film. Dielectric measurements of the films showed comparable dielectric constant values of BT NCs over 1-100 kHz without significant loss. Furthermore, the bottom gate In2O3 NC thin film transistors exhibited outstanding device performance with a field-effect mobility of 11.1 cm(2) V(-1) s(-1) at a low applied gate voltage with BT-5 NC/SiO2 as the gate dielectric. The low-density trapped state was observed at the interface between the In2O3 NC semiconductor and the BT-5 NCs/SiO2 dielectric film. Furthermore, compensation of the applied gate field by an electric dipole-induced dipole field within the BT-5 NC film was also observed.

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Section: Resultsmentioning

confidence: 99%

Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor

Pham

Yang

Lee

et al. 2016

ACS Appl. Mater. Interfaces

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Solution‐processed Tetrafluoroborate‐capped In₂O₃ Nanocrystal Thin‐Film Transistors

Dao

Jeong

2018

Bulletin Korean Chem Soc

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Colloidal oleic acid (OA) capped indium oxide nanocrystal (In2O3 NC) was synthesized by the hot injection method. Afterwards, the ligand exchange reaction between OA and nitrosyl tetrafluoroborate (NOBF4) afforded tetrafluoroborate‐capped indium oxide nanocrystals (In2O3‐BF4− NCs). In2O3‐BF4− NCs thin‐film transistor (TFT) devices were fabricated by spin coating, exhibiting an electron mobility of 7.3 × 10−3, 5 × 10−2, and 0.19 cm2/V/s for low‐temperature annealed In2O3‐BF4− NCs films at 80, 150, and 250 °C, respectively. An even higher mobility of 13.0 cm2/V/s was obtained by annealing the films at 350 °C, because of decreasing distance between the adjacent In2O3 NCs, enhancing the electronic coupling between the neighboring NCs on the NC film by the decomposition of inorganic ligand NOBF4. The temperature‐dependent behavior of the electron transport of In2O3‐BF4− NCs films annealed at different temperatures of 150, 250, and 350 °C for application in TFT device is also reported. We conclude that thermally activating electron transport mechanism through nearest neighbor hopping works for the In2O3 NC solid in the range from 223 to 323 K, and the activation energy decreases with increasing annealing temperatures.

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Synthesis of freestanding water-soluble indium oxide nanocrystals capped by alanine nitric acid via ligand exchange for thin film transistors and effects of ligands on the electrical properties

Cited by 2 publications

References 41 publications

Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor

Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor

Solution‐processed Tetrafluoroborate‐capped In₂O₃ Nanocrystal Thin‐Film Transistors

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Synthesis of freestanding water-soluble indium oxide nanocrystals capped by alanine nitric acid via ligand exchange for thin film transistors and effects of ligands on the electrical properties

Cited by 2 publications

References 41 publications

Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor

Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor

Solution‐processed Tetrafluoroborate‐capped In2O3 Nanocrystal Thin‐Film Transistors

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Solution‐processed Tetrafluoroborate‐capped In₂O₃ Nanocrystal Thin‐Film Transistors