1996
DOI: 10.1021/om960480w
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Synthesis of Gallium Chalcogenide Cubanes and Their Use as CVD Precursors for Ga2E3 (E = S, Se)

Abstract: The gallium−chalcogen heterocubanes [Cp*Ga(μ3-E)]4, E = S (1) and Se (2), and [Cp†Ga(μ3-Se)]4 (3) have been synthesized by dehalosilylation reactions between E(SiMe3)2 (E = S, Se) and RGaCl2, R = Cp* (C5Me5) and Cp† (C5Me4Et), and are characterized by elemental analyses, NMR spectroscopy, and mass spectrometry. The use of compounds 1 and 2 as single-source MOCVD precursors for the low-temperature growth of Ga2E3 films at 290−310 °C is described. The as-deposited films were amorphous; however, upon thermal anne… Show more

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Cited by 51 publications
(37 citation statements)
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“…[112] In both cases, the films were of the hexagonal GaQ phase, which is the thermodynamically stable one for GaSe, while hexagonal GaTe is metastable. [112] [(C 5 Me 5 )Ga(l 3 -Q)] 4 and [(C 5 Me 4 Et)Ga(l 3 -Q)] 4 (Q = S, Se) also have cubane-like structures, and could be used to grow films of amorphous Ga 2 Q 3 at 290±310 C. The films crystallized into the cubic phase upon annealing at 500 C. [113] Barron and co-workers have studied the volatilities of gallium chalcogenides cubanes. [114] …”
Section: From Alkyl Metal Chalcogenatesmentioning
confidence: 99%
“…[112] In both cases, the films were of the hexagonal GaQ phase, which is the thermodynamically stable one for GaSe, while hexagonal GaTe is metastable. [112] [(C 5 Me 5 )Ga(l 3 -Q)] 4 and [(C 5 Me 4 Et)Ga(l 3 -Q)] 4 (Q = S, Se) also have cubane-like structures, and could be used to grow films of amorphous Ga 2 Q 3 at 290±310 C. The films crystallized into the cubic phase upon annealing at 500 C. [113] Barron and co-workers have studied the volatilities of gallium chalcogenides cubanes. [114] …”
Section: From Alkyl Metal Chalcogenatesmentioning
confidence: 99%
“…Organometallic and classical complexes of group 13 elements, particularly Ga and In, with chalcogen ligands are of considerable recent interest due to their diverse structural features [1] and their relevance as molecular precursors for metal chalcogenides [2][3][4][5]. Thus a variety of gallium and indium complexes with thiolates [6], pyridine-2-thiolate [7], monothiocarboxylate [8], and dithiolates (xanthates [9][10][11], dithiocarbamates [12,13], diorganodithio-phosphinate/-phosphates [14][15][16][17]) have been synthesized and characterized.…”
Section: Introductionmentioning
confidence: 99%
“…[5], nicht aber in (tBuGaS) 4 , was auf den geringeren Raumanspruch der tBu-Gruppe zuru È ckgefu È hrt werden kann. Der Mittelwert (d GaS = 235.6 pm) ist den GaS-Bindungsla È ngen in Gallium-Sulfido-Ka È figen des Typs (tBuGaS) n (n = 4, 6 und 7) sehr a È hnlich [3,6], ist aber deutlich la È nger als die GaS-Bindungen in [tBuGa(py)S] 3 [d GaS = 224 pm] mit zweifach koordinierten Schwefelatomen [6] und in anionischen GaS-Ka È figen mit ebenfalls zweifach koordinierten Schwefel-Atomen; als Beispiel sei hier [Ga 4 S 10 ] 8± mit einem adamantanoiden Ga 4 S 6 -Geru È st genannt [d GaSbr.…”
Section: Spektroskopische Charakterisierungunclassified
“…Neben ihrer Østhetik fanden sie Interesse als Vorla È ufermoleku È le zur Abscheidung von Galliumchalkogeniden; insbesondere sei hier die Gasphasenabscheidung einer kubischen Modifikation von GaS erwa È hnt [2]. Die Beispiele beschra È nken sich auf R = tertButyl [3], Cp* [4] sowie CpFe(CO) 2 [5] substi-tuierte Vertreter. Zur Darstellung werden verschiedene, in ihrer breiten Anwendbarkeit aber meist eingeschra È nkte Methoden beschrieben; die eine geht von RGaCl 2 und (Me 3 Si) 2 E aus [4,5], die anderen beinhalten die protolytische Spaltung von Ga±C-Bindungen mit H 2 E [3 a] bzw.…”
Section: Introductionunclassified
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