Synthesis of gallium nitride nanostructure using pulsed laser ablation in liquid for photoelectric detector

Amir, Husam Aldin A. Abdul; Fakhri, Makram A.; Alwahib, Ali Abdulkhaleq; Salim, Evan T.; Alsultany, Forat H.; Hashim, U.

doi:10.1016/j.mssp.2022.106911

Cited by 20 publications

(9 citation statements)

References 97 publications

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“…The spectrum shows excitation bands located at 456, 458, 458, 464, and 466 nm, which correspond to energy gaps of about 2.71, 2.7, 2.7, 2.67, and 2.66 eV, respectively. The energy gap value approximated using PL data is marginally greater in magnitude compared to what was ascertained using UV–vis data 118 . Further, it differs from the energy gap of pure WO 3 .…”

Section: Resultsmentioning

confidence: 52%

Mesoporous Ag@WO3 core–shell, an investigation at different concentrated environment employing laser ablation in liquid

Salim,

Saimon,

Muhsin

et al. 2024

Sci Rep

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In this study, silver-tungsten oxide core–shell nanoparticles (Ag–WO3 NPs) were synthesized by pulsed laser ablation in liquid employing a (1.06 µm) Q-switched Nd:YAG laser, at different Ag colloidal concentration environment (different core concentration). The produced Ag–WO3 core–shell NPs were subjected to characterization using UV–visible spectrophotometry, X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive spectroscopy, electrical analysis, and photoluminescence PL. The UV–visible spectra exhibited distinct absorption peaks at around 200 and 405 nm, which attributed to the occurrence of surface Plasmon resonance of Ag NPs and WO3 NPs, respectively. The absorbance values of the Ag–WO3 core–shell NPs increased as the core concentrations rose, while the band gap decreased by 2.73–2.5 eV, The (PL) results exhibited prominent peaks with a central wavelength of 456, 458, 458, 464, and 466 nm. Additionally, the PL intensity of the Ag–WO3-NP samples increased proportionally with the concentration of the core. Furthermore, the redshift seen at the peak of the PL emission band may be attributed to the quantum confinement effect. EDX analysis can verify the creation process of the Ag–WO3 core–shell nanostructure. XRD analysis confirms the presence of Ag and WO3 (NPs). The TEM images provided a good visualization of the core-spherical shell structure of the Ag–WO3 core–shell NPs. The average size of the particles ranged from 30.5 to 89 (nm). The electrical characteristics showed an increase in electrical conductivity from (5.89 × 10−4) (Ω cm)−1 to (9.91 × 10−4) (Ω cm)−1, with a drop in average activation energy values of (0.155 eV) and (0.084 eV) at a concentration of 1.6 μg/mL of silver.

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Section: Resultsmentioning

confidence: 52%

Mesoporous Ag@WO3 core–shell, an investigation at different concentrated environment employing laser ablation in liquid

Salim,

Saimon,

Muhsin

et al. 2024

Sci Rep

Self Cite

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“…The roughness decreases in the 1800 mJ and 2000 mJ samples, and the increase in the root mean square causes a decrease in structural crystallization and regular crystal distribution [5]. It has been noted that the 1400 mJ and 1600 mJ have an optimum roughness and grain size [20].…”

Section: Morphological Properties 321 Afm Resultsmentioning

confidence: 99%

“…The (GaN) Gallium nitride is a material with the high value of the thermal-conductivity that may be used in a variety of sensing applications [13][14][15][16] solar cells [17,18], light-emitting diode [19][20][21], different of optical and optoelectronics devices [22,23], transistors (high-power) [24,25], and the fabricated beta voltaicsdevices [26].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of GaN/quartz nanostructure using pulsed laser ablation in liquid

Fakhri¹,

Alwahib²,

Salim³

et al. 2022

Phys. Scr.

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The pulsed laser ablation approach was used to synthesize gallium nitride (GaN) nanoparticles (NPs) at six distinct ablation energies. The nanoparticle was deposited on a quartz substrate using the drop cast technique. Two peaks of h-GaN nanostructures are detected in the XRD pattern, at 2θ = 34.64 and 37.98, reflected from the (002) and (100) planes, respectively. The hexagonal crystal nature of GaN is indicated by the morphological features, which is shown in the XRD pattern. The greatest laser power, 2000 mJ, shows a modest emission peaking at 3.34 eV, according to photoluminescence (PL) spectra. At 1400 mJ, the highest emission peak was 3.83 eV. The pulsed laser is used in this study to create nanoparticles with various characteristics.

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“…By adjusting the composition of these alloys, the band gap can be modified across the entire solar spectrum, from deep UV to IR 4 – 7 . GaN (gallium nitride), in particular, possesses a broad band gap of 3.4 eV and a wurtzite hexagonal structure, which results in minimal leakage currents and enables the operation of optoelectronic devices at elevated temperatures and frequencies 8 – 11 . GaN proves advantageous for optoelectronic applications, such as photodiodes, which find utility in diverse detection, monitoring, and control scenarios 12 – 15 .…”

Section: Introductionmentioning

confidence: 99%

Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition

Fakhri,

Jabbar,

AbdulRazzaq

et al. 2023

Sci Rep

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In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition (PLD) was demonstrated. The porous silicon was prepared using laser-assisted electrochemical etching (LAECE). The structural, optical, and electrical properties of GaN films were investigated as a function of laser fluence. XRD studies revealed that the GaN films deposited on porous silicon were nanocrystalline, exhibiting a hexagonal wurtzite structure along the (100) plane. Spectroscopic property results revealed that the photoluminescence PL emission peaks of the gallium nitride over porous silicon (GaN/PSi) sample prepared at 795 mJ/mm2 were centered at 260 nm and 624 nm. According to topographical and morphological analyses, the deposited film consisted of spherical grains with an average diameter of 178.8 nm and a surface roughness of 50.61 nm. The surface of the prepared films exhibited a cauliflower-like morphology. The main figures of merit of the nanostructured GaN/P-Si photodetectors were studied in the spectral range of 350–850 nm. The responsivity, detectivity, and external quantum efficiency of the photodetector at 575 nm under − 3 V were 19.86 A/W, 8.9 × 1012 Jones, and 50.89%, respectively. Furthermore, the photodetector prepared at a laser fluence of 795 mJ/mm2 demonstrates a switching characteristic, where the rise time and fall time are measured to be 363 and 711 μs, respectively.

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Synthesis of gallium nitride nanostructure using pulsed laser ablation in liquid for photoelectric detector

Cited by 20 publications

References 97 publications

Mesoporous Ag@WO3 core–shell, an investigation at different concentrated environment employing laser ablation in liquid

Mesoporous Ag@WO3 core–shell, an investigation at different concentrated environment employing laser ablation in liquid

Synthesis and characterization of GaN/quartz nanostructure using pulsed laser ablation in liquid

Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition

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