Synthesis of GaN Nanorods by a Solid‐State Reaction

Bao, Ke; Shi, Liang; Chen, Changzhong; Mao, Wutao; Zhu, Longjiao; Cao, Jie

doi:10.1155/2010/271051

Cited by 16 publications

(6 citation statements)

References 35 publications

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“…Furthermore, the background of the Raman spectra was high at 800 to 2000 cm -1 . Similar results were also obtained from Bao et al (2010) and Chalker et al (1999), where the background of the Raman spectrum was high after 800 cm -1 . However, the reasons for these phenomena are unclear at present.…”

Section: Methodssupporting

confidence: 86%

Growth of Gallium Nitride Thin Film with the Aid of Polymethyl Methacrylate

C.Y.¹,

S.S.²,

F.K.³

et al. 2014

JSM

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Section: Methodssupporting

confidence: 86%

Growth of Gallium Nitride Thin Film with the Aid of Polymethyl Methacrylate

C.Y.¹,

S.S.²,

F.K.³

et al. 2014

JSM

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“…Misaligned GaN characteristics were also noted in the XRD 2-θ data (Figure f,g). Although the GaN (002) and (004) peaks were dominant, satellite peaks of GaN(011), (020) and (021) are observed due to the misaligned GaN grains. , Figure d is a top-view SEM image of the GaN film after second GaN growth (for 60 min). Some areas of the GaN film are not fully planarized owing to the randomly oriented GaN grains, as shown in Figure h.…”

Section: Resultsmentioning

confidence: 99%

Stability of Graphene and Influence of AlN Surface Pits on GaN Remote Heteroepitaxy for Exfoliation

et al. 2023

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Remote epitaxy is a promising technology that has recently attracted considerable attention, which enables the growth of thin films that copy the crystallographic characteristics of the substrate through two-dimensional material interlayers. The grown films can be exfoliated to form freestanding membranes, although it is often challenging to apply this technique if the substrate materials are prone to damage under harsh epitaxy conditions. For example, remote epitaxy of GaN thin films on graphene/GaN templates has not been achieved by a standard metal−organic chemical vapor deposition (MOCVD) method due to such damages. Here, we report GaN remote heteroepitaxy on graphene/AlN templates by MOCVD and investigate the influence of surface pits in AlN on the growth and exfoliation of GaN thin films. We first show the thermal stability of graphene before GaN growth, based on which two-step growth of GaN on graphene/AlN is developed. The GaN samples are successfully exfoliated after the first step of the growth at 750 °C, whereas the exfoliation failed after the second step at 1050 °C. In-depth analysis confirms that the pits in AlN templates lead to the degradation of graphene near the area and thus the alteration of growth modes and the failure of exfoliation. These results exemplify the importance of chemical and topographic properties of growth templates for successful remote epitaxy. It is one of the key factors for III-nitride-based remote epitaxy, and these results are expected to be of great help in realizing complete remote epitaxy using only MOCVD.

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“…The SAED patterns were indexed using standard hexagonal GaN (h-GaN) and AlN (h-AlN) phases, having a space group of P6 3 mc. The lattice parameters of GaN (a = 3.195 Å and c = 5.182 Å) and AlN (a = 3.128 Å and c = 5.017 Å) were used for identifying the planar spacing [68,69]. The rings of the GaN SAED correspond to the (100), (102), and (112) reflections, respectively [70].…”

Section: Resultsmentioning

confidence: 99%

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

et al. 2020

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Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al2O3) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-ray diffraction (HRXRD), and atomic force microscopy (AFM). Scanning and transmission electron microscopy of coated silica nanosprings were compared with corresponding data for the GaN thin films. As grown, GaN on NS is conformal and amorphous. Upon introducing buffer layers of Al2O3 or AlN or combinations thereof, GaN is nanocrystalline with an average crystallite size of 11.5 ± 0.5 nm. The electrical properties of the GaN coated NS depends on whether or not a buffer layer is present and the choice of the buffer layer. In addition, the IV curves of GaN coated NS and the thin films (TF) with corresponding buffer layers, or lack thereof, show similar characteristic features, which supports the conclusion that atomic layer deposition (ALD) of GaN thin films with and without buffer layers translates to 1D nanostructures.

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Synthesis of GaN Nanorods by a Solid‐State Reaction

Cited by 16 publications

References 35 publications

Growth of Gallium Nitride Thin Film with the Aid of Polymethyl Methacrylate

Growth of Gallium Nitride Thin Film with the Aid of Polymethyl Methacrylate

Stability of Graphene and Influence of AlN Surface Pits on GaN Remote Heteroepitaxy for Exfoliation

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

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