Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

Yu, K. M.; Walukiewicz, W.; Scarpulla, Michael A.; Wu, Junqiao; Jasiński, Jacek B.; Liliental‐Weber, Z.; Beeman, J. W.; Pillai, Manoj R.; Aziz, Michael J.

doi:10.1063/1.1582393

Cited by 53 publications

(47 citation statements)

References 26 publications

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“…2-4 point out, no single crystal has been achieved after LTA annealings, even without ion implantation treatments. This is a striking fact even if we consider that LTA energies used in our experiments are of the order or higher than those values reported for the As-based semiconductors ͑0.2-0.4 J / cm 2 ͒, 26,27 where single crystal regrowth was successfully achieved.…”

Section: Resultsmentioning

confidence: 53%

See 1 more Smart Citation

Laser thermal annealing effects on single crystal gallium phosphide

Pastor¹,

Olea²,

Toledano-Luque³

et al. 2009

Journal of Applied Physics

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We have studied the laser thermal annealing ͑LTA͒ effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction ͑GIRXD͒, and transmission electron microscopy ͑TEM͒ measurements. After LTA process, the Raman spectra of samples annealed with the highest energy density show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding the GaP unannealed wafer. This behavior has been corroborated by GIXRD measurements. TEM images show that the LTA produces a defective layer with disoriented crystalline domains in the surface. The depth of this defective layer increases with the energy density of LTA. The lack of crystallinity after LTA processes could be related with the high bond energy value of GaP.

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Section: Resultsmentioning

confidence: 53%

“…25 In fact, using the LTA method, ion implanted amorphized layers of different As-based semiconductors such as GaAs, 25 GaN x As 1−x , 26 and Ga 1−x Mn x As ͑Ref. 27͒ could be recrystallized into single crystal.…”

Section: Resultsmentioning

confidence: 99%

Laser thermal annealing effects on single crystal gallium phosphide

Pastor¹,

Olea²,

Toledano-Luque³

et al. 2009

Journal of Applied Physics

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“…The values 5 of the band gap and the line width were determined by fitting the PR spectra to the Aspnes third-derivative functional form. [30] The good epitaxial quality of the GaN x As 1-x layer formed by N + -implantation followed by PLM (0.4 J/cm 2 ) and RTA (950°C for 10-150 s) is confirmed by channeling RBS measurements [28]. Channeling-RBS further reveals that the melt-solid interface occurs at ~200 nm below the surface.…”

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confidence: 65%

“…Using a pulsed excimer laser, the heavily-damaged layer caused by ion implantation can be melted and recrystallized on time scales on the order of 10 -7 s. Such rapid solidification prevents secondary phase formation even when the equilibrium solubility limit has been exceeded by orders of magnitude [27]. This combined ion beam and laser processing approach has been demonstrated as an effective approach to synthesize dilute semiconductor alloys including GaN x As 1-x and Ga 1-x Mn x As [28,29].Residual damage in the GaN x As 1-x-y P y layers was removed by post-PLM rapid thermal annealing at 950°C for 10-150 sec in flowing N 2 ambient. The crystalline structure of the GaN x As 1-x-y P y samples was studied by channeling Rutherford backscattering spectrometry (c-RBS) and x-ray diffraction.…”

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confidence: 99%

Multiband GaNAsP quaternary alloys

Walukiewicz

Ager

et al. 2006

Applied Physics Letters

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134

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We have synthesized GaN x As 1-y P y alloys (x ~ 0.3-1% and y=0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E M ) of the GaAs 1-y P y substrate, and strong optical transitions from the valence band to the lower (E -) and upper (E + ) conduction subbands are observed . The relative strengths of the E -and E + transition change as the localized N level E N emerges from the conduction band forming narrow intermediate band for y > 0.3.The results show that GaN x As 1-x-y P y alloys with y>0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.PACS numbers: 71.20.Nr; 78.66.Fd; 61.72.Vv; 89.30 The potential technological importance of the multiband semiconductors raises the question if they can also be realized in group III-N x -V 1-x HMAs as well. In most III-V compounds the localized N level lies above the conduction band edge. An exception is the GaAs 1-y P y alloy system in which N-level falls below the conduction band edge for y>0.3. Consequently the anticrossing interaction of the N states with the extended conduction band states in these GaAsP alloys is expected to result in the formation of a narrow band of intermediate states. This is supported by the observation that the fundamental bandgap in GaN x P 1-x is transformed from indirect to direct for x > 0.005. [22][23][24]. However, the novel band structure of GaN x As 1-x-y P y alloys has not been explored [25,26] yet. In this paper we report the synthesis of quaternary GaN x As 1-x-y P y 4 alloys using N + implantation in epitaxially grown GaAsP films followed by pulsed laser melting techniques. We demonstrate that GaN x As 1-x-y P y with y>0.3 is a multiband system that can be exploited for the fabrication of IBSCs. GaN x As 1-x-y P y layers were formed by N + implantation into ~0.5 µm thick GaAs 1-y P y (y=0-0.35) epitaxial films grown by metalorganic chemical vapor deposition (MOCVD) on semi-insulating GaAs substrate. Sequential N + implants with energies of 80 and 33keV with doses of 7x10 15 and 2.4x10 15 cm -2 , respectively, were used to create ~0.2 µm thick layers with a uniform N atomic concentration of ~4.4x10 20 cm -3 (2 mole percent). The implanted structures were subjected to pulsed-laser melting (PLM) in air using a KrF excimer laser (λ=224nm) with pulse duration ~30 ns and photon fluence at the sample between 0.2 and 0.4J/cm 2 . Both the ion implantation and PLM processes are inherently non-equilibrium. Using a pulsed excimer laser, the heavily-damaged layer caused by ion implantation can be melted and recrystallized on time scales on the order of 10 -7 s. Such rapid solidification prevents secondary phase formation even when the equilibrium solubility limit has been exceeded by orders of magnitude [27]. This combined ion beam and laser processing approach has been demonstrated as an effective approac...

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“…38 Most recently, we have shown that pulsed laser melting (PLM) of N-implanted III-Vs dramatically improves the incorporation of N on the group-V element site. 39,40 In PLM, the near surface absorption of a single intense laser pulse instantaneously melts the implant-damaged or amorphized layer. This is followed immediately by rapid epitaxial regrowth from the liquid.…”

Section: Samplesmentioning

confidence: 99%

Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states.The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

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Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

Cited by 53 publications

References 26 publications

Laser thermal annealing effects on single crystal gallium phosphide

Laser thermal annealing effects on single crystal gallium phosphide

Multiband GaNAsP quaternary alloys

Band anticrossing in dilute nitrides

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