Abstract:The chapter deals with the synthesis of graphene on metal/SiC substrates. The graphene synthesis is pursued at a relatively low temperature. The method can be used for the graphene transfer from SiC to dielectric materials. Annealing of the structure results in a chemical reaction of a metal with SiC forming silicides and carbon-rich products at the boundary between metal and silicon carbide. Carbon atoms segregate at the top of metal/ metal silicide layer during the cooling period of the process. The chapter … Show more
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