Synthesis of hexagonal plate-like Al4Si2C5 and the effect of Al4Si2C5 addition to Al2O3–C refractory

Influence of Ti3AlC2 addition on water vapor resistance of low‐carbon Al2O3–C refractories

“…15,16 Moreover, the replacement of Al with Al 4 SiC 4 can prevent the formation of hydratable phases, such as Al 4 C 3 and AlN. [17][18][19] In addition, Al 2 O 3 and B 2 O 3 can be generated by the oxidation of Al 8 B 4 C 7 , which blocks the pores and forms dense ceramic phases when reacting with the surrounding matrix. 20 Shan et al 21 synthesized an amorphous Si 2 BC 3 N powder by applying mechanical alloying and found that Si 2 BC 3 N filled the gap between B 4 C, a low-temperature antioxidant (550 • C), and Si/SiC, a medium-and high-temperature antioxidant (699/970 • C).…”

“…The introduction of Al 4 SiC 4 results in higher oxidation resistance owing to the formation of a dense oxide protective layer (Al 2 O 3 and SiO 2 ) by oxidation at high temperatures 15,16 . Moreover, the replacement of Al with Al 4 SiC 4 can prevent the formation of hydratable phases, such as Al 4 C 3 and AlN 17–19 . In addition, Al 2 O 3 and B 2 O 3 can be generated by the oxidation of Al 8 B 4 C 7 , which blocks the pores and forms dense ceramic phases when reacting with the surrounding matrix 20 .…”