Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity

Abstract

In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor–liquid–solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the length of the nanowires could be over 30 μm, confirmed by field-emission scanning electron microscopy (SEM). Characterization was conducted with X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence spectrum (PL). High-resolution TEM studies confirm that the grown nanowires were single crystalline c-In2O3 nanowires of body-centered cubic structures. The room temperature PL spectrum shows a strong peak around 2.22 eV, originating from the defects in the crystal structure. The electrical resistivity of a single indium oxide nanowire was measured to be 1.0 × 10−4 Ω⋅cm, relatively low as compared with previous works, which may result from the abundant oxygen vacancies in the nanowires, acting as unintentional doping.

Chemical Vapor Deposition-Fabricated Manganese-Doped and Potassium-Doped Hexagonal Tungsten Trioxide Nanowires with Enhanced Gas Sensing and Photocatalytic Properties

“…Comparing Figure S8a,c , we could find the intensity decrease of W 6+ and the intensity increase of W 5+ after doping, demonstrating the increase in oxygen vacancies [ 15 ]. The binding energy of O1s corresponded to 530.1 eV; there was a peak at 532.1 eV, resulting from O 2− , O − , and OH - signals based on oxygen vacancies [ 22 ], which may be attributed to surface contaminants, such as water molecules attached to the specimen or adsorbed oxygen from the air [ 29 ], as shown in Figure 3 b. Similarly, the W4f peaks of all metal-doped tungsten oxide nanowires exhibited two major peaks after deconvolution, belonging to W4f 7/2 and W4f 5/2 orbitals in the W 6+ state and two low-intensity peaks in the W 5+ state.…”

“…Most of the metal-doped tungsten oxide nanowires are synthesized by the hydrothermal method [ 11 , 20 ] and solvent heat method [ 21 ], while in this work, we used a three-zone tube furnace to grow nanowires by the CVD method [ 22 , 23 , 24 ], which has fewer steps than the common doping methods. Moreover, the products here are less likely to be contaminated by the reactive solute solvent.…”

Controlled Synthesis and Enhanced Gas Sensing Performance of Zinc-Doped Indium Oxide Nanowires

“…There are many methods for synthesizing indium oxide nanowires, such as pulse laser deposition [ 12 ], the electrospinning method [ 13 ], the template method [ 14 ], and chemical vapor deposition [ 15 , 16 , 17 ]. In this study, chemical vapor deposition was used to synthesize the Zn-doped indium oxide nanowires, as it is an easily controlled method for forming the desired morphology.…”

Synthesis and Characterization of Indium Tin Oxide Nanowires with Surface Modification of Silver Nanoparticles by Electrochemical Method

“…With the development of nanotechnology, nanodevices are undergoing a huge upgrade over the past few years. To fulfill the requirements of this technology, studies have been conducted on diverse nanomaterials [ 1 , 2 , 3 ]. Among them, indium tin oxide (ITO) is a transparent conducting oxide (TCO) with excellent characteristics of high light transmission and low resistivity; thus, it is extensively used in optoelectronic products, including liquid crystal displays [ 4 ], solar cells [ 5 ], flat-panel displays [ 6 ], and light-emitting diodes [ 7 ].…”